TRANSIENT CAPACITIVE MEASUREMENTS OF ELECTRONIC STATES AT THE SiO2-Si INTERFACE.

Volumn , Issue , 1978, Pages 421-427

  Johnson, Noble M ^a   Bartelink, Dirk J ^a   Schulz, M ^a  

^a NONE

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR MATERIALS - MEASUREMENTS;

SEMICONDUCTOR DEVICES;

EID: 0018162176     PISSN: None     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (17)