Deep-level transient spectroscopy: A new method to characterize traps in semiconductors

Journal of Applied Physics

Volumn 45, Issue 7, 1974, Pages 3023-3032

  Lang, D V ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS; SPECTROSCOPY;

GALLIUM ARSENIDE;

SEMICONDUCTOR MATERIALS;

EID: 0016081559     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1663719     Document Type: Article

References (15)

1. The capacitance transient technique was first used by
2. A comprehensive treatment of capacitance and current transients is given by
3. preceding paper
4. This is referred to as a clear pulse in Ref. 7.
5. Princeton Applied Research model 162 with model 164 gate modules.