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Volumn 68, Issue 24, 1996, Pages 3422-3424

Room-temperature migration and interaction of ion beam generated defects in crystalline silicon

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0006353927     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115780     Document Type: Article
Times cited : (25)

References (14)
  • 6
    • 21544452922 scopus 로고    scopus 로고
    • G. D. Watkins, in Radiation Effects in Semiconductors, edited by F. L. Vook (Plenum, New York, 1968), p. 67.
    • G. D. Watkins, in Radiation Effects in Semiconductors, edited by F. L. Vook (Plenum, New York, 1968), p. 67.
  • 7
    • 21544467146 scopus 로고    scopus 로고
    • S. Mottet and A. Roizes, in Defect and Radiation Effects in Semiconductors-1978 IOP Conference Proceedings No. 46, edited by J. H. Albany (Institute of Physics, Bristol, 1979).
    • S. Mottet and A. Roizes, in Defect and Radiation Effects in Semiconductors-1978 IOP Conference Proceedings No. 46, edited by J. H. Albany (Institute of Physics, Bristol, 1979).
  • 8
    • 21544449011 scopus 로고    scopus 로고
    • G. Davies and R. C. Newman, in Handbook of Semiconductors (North Holland, Amsterdam, 1994), Vol. 3b, Chap. 21, pp. 1157-1636.
    • G. Davies and R. C. Newman, in Handbook of Semiconductors (North Holland, Amsterdam, 1994), Vol. 3b, Chap. 21, pp. 1157-1636.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.