Temperature dependence of peak heights in deep-level transient spectroscopy

Electronics Letters

Volumn 17, Issue 22, 1981, Pages 838-839

  Rockett, P I ^a   Peaker, A R ^a  

^a UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Deeplevel transient spectroscopy; Junction capacitance; Semiconductor devices and materials

Indexed keywords

SPECTROSCOPY;

SEMICONDUCTOR DEVICE TESTING;

EID: 0019625420     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19810583     Document Type: Article

References (3)

1. LANG, D. V.: ‘Deep-level transient spectroscopy: A new method to characterise traps in semiconductors’, J. Appl. Phys., 1974, 45, pp. 3023-3032
2. RHODERICK, E. H.: ‘Metal-semiconductor contacts’ (Clarendon Press, Oxford, 1978), p. 146
3. SAH, C. T., and REDDI, V. G. K.: ‘Frequency dependence of the reverse-biased capacitance of gold-doped silicon p* step junctions’, IEEE Trans., 1964, ED-11, pp. 345-349