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Applied Physics Letters

Volumn 48, Issue 15, 1986, Pages 1000-1002

Configurationally multistable defect in silicon

(2) Chantre, A a Kimerling, L C a

a LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 36549100615 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.96669 Document Type: Article

Times cited : (69)

References (13)

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- Kimerling, L.C.¹

2
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5
- 84950912816
- edited by N. M. Johnson, S. G. Bishop, and G. D. Watkins (Materials Research Society, Pittsburgh, PA)
- (1985) Microscopic Identification of Electronic Defects in Semiconductors , pp. 471
- Barnes, C.E.¹ Samara, G.A.²

6
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- The spectrum (b) shown in Fig. 1 was recorded following several injection sequences. As discussed later in the paper, a small fraction of the E 4 signal was consumed in each of these sequences. This phenomenon accounts for the reduced intensity of the E 4 peak on this spectrum, as compared to the quoted value.

7
- 3142782715
- edited by S. Mahajan and J. W. Corbett (North‐Holland, New York)
- (1983) Defects in Semiconductors II , pp. 95
- Benton, J.L.¹ Levinson, M.²

8
- 0343300905
- (1983) Phys. Rev. B , vol.27 , pp. 6216
- Levinson, M.¹ Benton, J.L.² Kimerling, L.C.³

9
- 0343709839
- (1984) Phys. Rev. B , vol.30 , pp. 5817
- Levinson, M.¹ Stavola, M.² Besomi, P.³ Bonner, W.A.⁴

10
- 0020171578
- (1982) J. Appl. Phys. , vol.53 , pp. 5715
- Jellison, G.E.¹

11
- 0000485240
- (1985) Phys. Rev. B , vol.31 , pp. 7979
- Chantre, A.¹ Bois, D.²

12
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- (1985) Phys. Rev. B , vol.32 , pp. 3687
- Chantre, A.¹

13
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- (1985) J. Phys. C , vol.18 , pp. L109
- Bains, S.K.¹ Banbury, P.C.²

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.