Radiation effects on Si-JFET devices for front-end electronics

IEEE Transactions on Nuclear Science

Volumn 43, Issue 3 PART 2, 1996, Pages 1576-1584

  Citterio, Mauro ^a   Kierstead, James ^a   Rescia, Sergio ^a   Radeka, Veljko ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; COBALT; DOSIMETRY; ELECTRIC PROPERTIES; GAMMA RAYS; LOW TEMPERATURE OPERATIONS; NEUTRONS; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; THERMAL CYCLING;

CRYOGENIC TEMPERATURE; FRONT END ELECTRONICS; MAXIMUM DRAIN CURRENT; MONOLITHIC SILICON FIELD EFFECT TRANSISTORS; PINCH OFF VOLTAGE; RADIATION HARDNESS;

FIELD EFFECT TRANSISTORS;

EID: 0030165678     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.507106     Document Type: Article

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