Ultrathin nitrided gate dielectrics: plasma processing, chemical characterization, performance, and reliability

IBM Journal of Research and Development

Volumn 43, Issue 3, 1999, Pages 301-326

  Lucovsky, G ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOS DEVICES; MOSFET DEVICES; NITROGEN; PERFORMANCE; PLASMA APPLICATIONS; RAPID THERMAL ANNEALING; RELIABILITY; ULTRATHIN FILMS;

LOW TEMPERATURE REMOTE PLASMA ASSISTED PROCESSING; ULTRATHIN NITRIDE GATE DIELECTRICS;

DIELECTRIC MATERIALS;

EID: 0032663466     PISSN: 00188646     EISSN: None     Source Type: Journal    
DOI: 10.1147/rd.433.0301     Document Type: Article

References (52)

1. H.-Y. Yang, H. Niimi, and G. Lucovsky, J. Appl. Phys. 83, 2327 (1998).
2. E. M. Vogel, K. Z. Ahmed, B. Hornung, W. K. Henson, P. K. McLarty, G. Lucovsky, J. R. Hauser, and J. J. Wortman, IEEE Trans. Electron Devices 45, 1350 (1998).
3. G. Lucovsky, D. V. Tsu, R. A. Rudder, and R. J. Markunas, in Thin Film Processes 11, J. L. Vossen and W. Kern, Eds., Academic Press, Inc., Boston, 1991, p. 565.
4. 2 Interface, H. Z. Massoud, E. H. Poindexter, and C. R. Helms, Eds., The Electrochemical Society, Pennington, NJ, 1996, p. 441.
5. Z. Lu, M. J. Williams, P. F. Santos-Filho, and G. Lucovsky, J. Vac. Sci. Technol. A 13, 607 (1995); G. Lucovsky, P. Santos-Filho, G. Stevens, Z. Jing, and A. Banerjee, J. Non-Cryst. Solids 198-200, 19 (1996).
6. Z. Lu, M. J. Williams, P. F. Santos-Filho, and G. Lucovsky, J. Vac. Sci. Technol. A 13, 607 (1995); G. Lucovsky, P. Santos-Filho, G. Stevens, Z. Jing, and A. Banerjee, J. Non-Cryst. Solids 198-200, 19 (1996).
7. S. V. Hattangady, H. Niimi, and G. Lucovsky, J. Vac. Sci. Technol. A 14, 3017 (1996).
8. S. C. Song, H. F. Luan, Y. Y. Chen, M. Gardner, J. Fulford, M. Allen, and D. L. Kwong, IEDM Tech. Digest, p. 373 (1998).
9. T. P. Ma, IEEE Trans. Electron Devices 45, 680 (1998).
10. X. Guo and T. P. Ma, IEEE Electron Device Lett. 19, 207 (1998).
11. D. R. Lee, G. Lucovsky, M. R. Denker, and C. Magee, J. Vac. Sci. Technol. A 13, 607 (1995); D. R. Lee, C. R. Parker, J. R. Hauser, and G. Lucovsky, J. Vac. Sci. Technol. B 13, 1778 (1995).
12. D. R. Lee, G. Lucovsky, M. R. Denker, and C. Magee, J. Vac. Sci. Technol. A 13, 607 (1995); D. R. Lee, C. R. Parker, J. R. Hauser, and G. Lucovsky, J. Vac. Sci. Technol. B 13, 1778 (1995).
13. M. L. Green, D. Brasen, K. W. Evens-Lutterodt, L. C. Feldman, K. Krisch, W. Lennard, H. T. Tang, L. Manchanda, and M. T. Tang, Appl. Phys. Lett. 65, 848 (1994).
14. J. Ahn, J. Kim, G. Q. Lo, and D.-L. Kwong, Appl. Phys. Lett. 60, 2089 (1992).
15. H. Niimi and G. Lucovsky, Proceedings of the 1998 International Conference on Characterization and Metrology for ULSI Technology, D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters, Eds., The American Institute of Physics, Woodbury, NY, 1998, p. 273.
16. Y. Ma, T. Yasuda, and G. Lucovsky, J. Vac. Sci. Technol. A 11, 952 (1993); Y. Ma, T. Yasuda, S. Habermehl, and G. Lucovsky, J. Vac. Sci. Technol. B 11, 1533 (1993); Y. Ma and G. Lucovsky, J. Vac. Sci. Technol. B 12, 2504 (1994).
17. Y. Ma, T. Yasuda, and G. Lucovsky, J. Vac. Sci. Technol. A 11, 952 (1993); Y. Ma, T. Yasuda, S. Habermehl, and G. Lucovsky, J. Vac. Sci. Technol. B 11, 1533 (1993); Y. Ma and G. Lucovsky, J. Vac. Sci. Technol. B 12, 2504 (1994).
18. Y. Ma, T. Yasuda, and G. Lucovsky, J. Vac. Sci. Technol. A 11, 952 (1993); Y. Ma, T. Yasuda, S. Habermehl, and G. Lucovsky, J. Vac. Sci. Technol. B 11, 1533 (1993); Y. Ma and G. Lucovsky, J. Vac. Sci. Technol. B 12, 2504 (1994).
19. S. V. Hattangady, H. Niimi, and G. Lucovsky, Appl. Phys. Lett. 66, 3495 (1995); S. V. Hattangady, R. Kraft, D. T. Grider, M. A. Douglas, G. A. Brown, P. A. Tiner, J. W. Kuehne, P. E. Nicollian, and M. F. Pas, IEDM Tech. Digest, p. 495 (1996).
20. S. V. Hattangady, H. Niimi, and G. Lucovsky, Appl. Phys. Lett. 66, 3495 (1995); S. V. Hattangady, R. Kraft, D. T. Grider, M. A. Douglas, G. A. Brown, P. A. Tiner, J. W. Kuehne, P. E. Nicollian, and M. F. Pas, IEDM Tech. Digest, p. 495 (1996).
21. Y. Wu and G. Lucovsky, Proceedings of the 1998 International Conference on Characterization and Metrology for ULSI Technology, D. G. Seiler, A. C. Diebold, W. M. Bullis, T. J. Shaffner, R. McDonald, and E. J. Walters, Eds., The American Institute of Physics, Woodbury, NY, 1998, p. 288.
22. C. R. Parker, G. Lucovsky, and J. R. Hauser, IEEE Electron Device Lett. 19, 106 (1998).
23. Y. Wu and G. Lucovsky, IEEE Electron Device Lett. 19, 367 (1998).
24. K. Koh, H. Niimi, G. Lucovsky, and M. L. Green, Jpn. J. Appl. Phys. 37, 709 (1998).
25. G. Lucovsky, S. S. Kim, D. V. Tsu, G. G. Fountain, and R. J. Markunas, J. Vac. Sci. Technol. B 7, 861 (1989).
26. S. S. Kim and G. Lucovsky,J Vac. Sci. Technol. A 8, 2039 (1990).
27. T. Yasuda, Y. Ma, S. Habermehl, and G. Lucovsky, Appl. Phys. Lett. 60, 434 (1992).
28. E. H. Nicollian and A. Reisman, J. Electron. Mater. 17, 213 (1988).
29. P. Thanikasalam, T. K. Whidden, and D. K. Ferry, J. Vac. Sci. Technol. B 14, 2840 (1996).
30. Y. Ma, T. Yasuda, and G. Lucovsky, Mater. Res. Soc. Symp. Proc. 303, 325 (1993).
31. G. Lucovsky, A. Banerjee, B. Hinds, B. Claflin, K. Koh. and H. Yang, J. Vac. Sci. Technol. B 15, 1074 (1997).
32. B. C. Smith and H. H. Lamb, J. Appl. Phys. 83, 7635 (1998).
33. C. H. Bjorkman, C. E. Shearon, Jr., Y. Ma, T. Yasuda, G. Lucovsky, U. Emmerichs, C. Meyer, K. Leo, and H. Kurz, J. Vac. Sci. Technol. A 11, 964 (1993); C. H. Bjorkman, T. Yasuda, C. E. Shearon, Jr., U. Emmerichs, C. Meyer, K. Leo, and H. Kurz, J. Vac. Sci. Technol. B 11, 1521 (1993).
34. C. H. Bjorkman, C. E. Shearon, Jr., Y. Ma, T. Yasuda, G. Lucovsky, U. Emmerichs, C. Meyer, K. Leo, and H. Kurz, J. Vac. Sci. Technol. A 11, 964 (1993); C. H. Bjorkman, T. Yasuda, C. E. Shearon, Jr., U. Emmerichs, C. Meyer, K. Leo, and H. Kurz, J. Vac. Sci. Technol. B 11, 1521 (1993).
35. H. Niimi, Ph.D. Thesis, Department of Materials Science and Engineering, North Carolina State University, Raleigh, 1998.
36. G. Lucovsky, Y. Ma, S. S. He, T. Yasuda, D. J. Stephens, and S. Habermehl, Mater. Res. Soc. Symp. Proc. 284, 34 (1993); G. Lucovsky, S. S. He, M. J. Williams, and D. Stephens, Microelectron. Eng. 25, 329 (1994) and references therein.
37. G. Lucovsky, Y. Ma, S. S. He, T. Yasuda, D. J. Stephens, and S. Habermehl, Mater. Res. Soc. Symp. Proc. 284, 34 (1993); G. Lucovsky, S. S. He, M. J. Williams, and D. Stephens, Microelectron. Eng. 25, 329 (1994) and references therein.
38. G. Lucovsky and J. C. Phillips, J. Non-Cryst. Solids 227, 1221 (1998), and references therein.
39. Y. Ma, T. Yasuda, and G. Lucovsky, Appl. Phys. Lett. 64, 2226 (1994).
40. C. J. Parker, Ph.D. Thesis, Department of Electrical and Computer Engineering. North Carolina State University. Raleigh, 1998.
41. Y. Wu and G. Lucovsky, Proceedings of the IEEE International Reliability Physics Symposium, 1998, p. 70.
42. C. C. Chang, Surf. Sci. 48, 9 (1975).
43. S. Lo, D. Buchanan, Y. Taur, and W. Wang, IEEE Electron Device Lett. 18, 209 (1997).
44. L. Han, D. Wristers, J. Yan, M. Bhat, and D. Kwong, IEEE Electron Device Lett. 16, 319 (1995).
45. R. Fair, IEEE Electron Device Lett. 18, 244 (1997).
46. S. Wolf, in Silicon Procession for the VLSI Era. Vol. 3, Lattice Press, Sunset Beach, CA, 1995, p. 311.
47. J. Pfiester and F. Baker. IEEE Electron Device Lett. 11, 247 (1990).
48. G. Lucovsky, Y. Wu, H. Niimi, V. Misra, and J. C. Phillips. Appl. Phys. Lett. 74, 2005 (1999).
49. The National Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, CA, 1997.
50. B. Claflin, M. Binger, and G. Lucovsky, J. Vac. Sci. Technol. A 16, 1757 (1998).
51. G. Lucovsky, J. Vac. Sci. Technol. A 16, 356 (1998).
52. H. Niimi and G. Lucovsky, J. Vac. Sci. Technol. B 17 (1999), in press.