Minimization of dangling bond defects in hydrogenated silicon nitride dielectrics for thin film transistors (TFTs)

Journal of Non-Crystalline Solids

Volumn 227-230, Issue PART 2, 1998, Pages 1221-1225

  Lucovsky, G ^a   Phillips, J C ^b  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

Amorphous; Silicon nitride; TFT

Indexed keywords

AMORPHOUS ALLOYS; AMORPHOUS SILICON; CHEMICAL BONDS; CORRELATION METHODS; CRYSTAL DEFECTS; DEPOSITION; DIELECTRIC DEVICES; ELECTRONS; GATES (TRANSISTOR); OPTIMIZATION; PLASMA APPLICATIONS; SILICON NITRIDE;

PLASMA DEPOSITED DIELECTRICS; SOURCE GAS RATIO;

THIN FILM TRANSISTORS;

EID: 0032068309     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(98)00209-9     Document Type: Article

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