Modeling boron diffusion in ultrathin nitrided oxide p + Si gate technology

IEEE Electron Device Letters

Volumn 18, Issue 6, 1997, Pages 244-247

  Fair, Richard B ^a,b  

^a IEEE   (United States)

^b Duke University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMS; ION IMPLANTATION; MOSFET DEVICES; NITROGEN; SEMICONDUCTING BORON; SEMICONDUCTING FILMS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICA; ULTRATHIN FILMS;

NITRIDATION; PEROXY LINKAGE DEFECTS;

GATES (TRANSISTOR);

EID: 0031162227     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.585342     Document Type: Article

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