Bandstructure effect on high-field transport in GaN and GaAIN

Applied Physics Letters

Volumn 71, Issue 14, 1997, Pages 1999-2001

  Krishnamurthy, Srinivasan ^a   Van Schilfgaarde, Mark ^a   Sher, A ^a   Chen, A B ^b  

^a SRI INTERNATIONAL   (United States)

^b AUBURN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001506963     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.119767     Document Type: Article

References (17)

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8. i. The pseudopotential bands of Ref. 7 were said to have been fit to LDA bands; however, we find that in their case the X valley lies below the energy range for inflection [P. P. Ruden (private communication)]. We could not ascertain whether their fitting procedure improperly produced this ordering, or whether they fit to ill-converged LDA bands.
9. S. Krishnamurthy, A.-B. Chen, and A. Sher, Appl. Phys. Lett. 55, 1002 (1989).
10. A.-B. Chen and A. Sher, Semiconductor Alloys (Plenum, New York, 1995), Chap. 7, p. 157, and App. 7A.
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13. H. Rücker (unpublished).
14. M. S. Hybertsen and S. G. Louie, Phys. Rev. B 34, 5390 (1986); R. W. Golby, M. Schlüter, and L. J. Sham, ibid. 37, 10159 (1988).
15. M. S. Hybertsen and S. G. Louie, Phys. Rev. B 34, 5390 (1986); R. W. Golby, M. Schlüter, and L. J. Sham, ibid. 37, 10159 (1988).
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17. Our full-potential LDA conduction bands agree almost exactly with LDA pseudopotential bands; see Ref. 3.