Transport simulation of bulk AlxGa1-xN and the two-dimensional electron gas at the AlxGa1-xN/GaN interface

Journal of Applied Physics

Volumn 83, Issue 11, 1998, Pages 5896-5903

  Krishnan, Mahesh S ^a   Goldsman, Neil ^a   Christou, Aris ^a  

^a UNIVERSITY OF MARYLAND   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0042805292     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367452     Document Type: Article

References (29)

1. S. Nakamura, T. Mukai, M. Senoh, and N. Iwasa, Jpn. J. Appl. Phys., Part 1 31, 195 (1991).
2. M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, and D. T. Olson, Appl. Phys. Lett. 62, (1993).
3. S. C. Binari, Electrochem. Soc. Proc. 95, 136 (1995).
4. L. B. Rowland, K. Doverspike, D. K. Gaskill, and J. A. Freitas, Jr., Mater. Res. Soc. Symp. Proc. 339, (1994).
5. J. S. Foresi and T. D. Moustakas, Appl. Phys. Lett. 62, 2859 (1993).
6. M. A. Littlejohn, J. R. Hauser, and T. H. Glisson, Appl. Phys. Lett. 26, 625 (1975).
7. B. Gelmont, K. Kim, and M. Shur, J. Appl. Phys. 74, 1818 (1993).
8. J. Kolnik, H. I. Oguzman, K. F. Brennan, R. Wang, P. P. Ruden, and Y. Wang, J. Appl. Phys. 78, 1033 (1995).
9. J. Hagen, R. D. Metcalf, D. Wickenden, and W. Clark, J. Phys. C 11, 143 (1978).
10. B. Baranov, L. Daweritz, V. B. Gutan, G. Jungk, H. Neumann, and H. Raidt, Phys. Status Solidi A 29, 629 (1978).
11. S. Yoshida, S. Misawa, and S. Gonda, J. Appl. Phys. 53, 6844 (1982).
12. M. A. Khan, R. A. Skogman, R. G. Schulze, and M. Gershenzon, Appl. Phys. Lett. 60, 3027 (1992).
13. R. P. Joshi, Appl. Phys. Lett. 64, 223 (1994).
14. J. Singh, Physics of Semiconductors and their Heterostructures (McGraw-Hill, New York, 1993).
15. C. Jacoboni and P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation (Springer, New York, 1991).
16. P. Lugli and D. K. Ferry, IEEE Trans. Electron Devices 32, 2431 (1985).
17. K. S. Yoon, G. B. Stringfellow, and R. J. Huber, J. Appl. Phys. 62, 1931 (1987).
18. K. Yokoyama and K. Hess, Phys. Rev. B 63, 938 (1986).
19. G. Halkias, A. Vegiri, G. Pananakakis, and A. Christou, Solid-State Electron. 35, 459 (1992).
20. A. M. Cruz Serra and H. Abreu Santos, J. Appl. Phys. 70, 2734 (1991).
21. A. Abou-Elnour and K. Schuenemann, J. Appl. Phys. 74, 3273 (1993).
22. Mathew N. O. Sadiku, Numerical Techniques in Electromagnetics (CRS, 1992).
23. A. Abou-Elnour and K. Schuenemann, Solid-State Electron. 37, 27 (1994).
24. M. Asif Khan, J. N. Kuznia, D. T. Olson, M. Blasingame, and L. F. Reitz, Appl. Phys. Lett. 62, 2917 (1992).
25. D. K. Ferry, Semiconductors (Macmillan, New York, 1991).
26. Properties of Group III Nitrides, edited by J. H. Edgar (IEE, UK, 1994).
27. Landolt Börstein, Numerical Data and Functional Relationships in Science and Technology, edited by Harbeke, Madelung, and Rossler (Springer, Berlin, 1982), Vol. 17.
28. E. A. Albanesi, W. R. L. Lambrecht, and B. Segall, Phys. Rev. B 48, 17 841 (1993).
29. W. J. Fan, M. F. Li, T. C. Chong, and J. B. Xia, J. Appl. Phys. 79, 188 (1996).