Velocity-field characteristic of indium nitride

Materials Research Society Symposium - Proceedings

Volumn 482, Issue , 1997, Pages 845-850

  O'Leary, S K ^a   Foutz, B E ^a   Shur, M S ^a   Eastman, L F ^a   Bhapkar, U V ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON VELOCITY ANALYZERS; HIGH TEMPERATURE EFFECTS; MONTE CARLO METHODS; SATURATION (MATERIALS COMPOSITION); SEMICONDUCTOR DOPING;

INDIUM NITRIDE; VELOCITY FIELD CHARACTERISTIC;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0031348871     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-482-845     Document Type: Conference Paper

References (20)