Heavy ions induced electrical and structural defects in thermal SiO2 films

First European Conference on Radiation and Its Effects on Devices and Systems - RADECS 91

Volumn , Issue , 1992, Pages 484-488

  Busch, M C ^a   Dooryhee, E ^a   Slaoui, A ^a   Toulemonde, M ^a   Mesli, A ^a   Siffert, P ^a  

^a Centre de Recherches Nucleaires   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRIC VARIABLES MEASUREMENT; INFRARED SPECTROSCOPY; ION BEAMS; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE STRUCTURES; SILICA;

ELECTRICALLY ACTIVE EFFECTS; HEAVY IONS;

RADIATION EFFECTS;

EID: 0026973193     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (29)