Single-Event Gate Rupture in Vertical Power MOSFETs; An Original Empirical Expression

IEEE Transactions on Nuclear Science

Volumn 41, Issue 6, 1994, Pages 2152-2159

  Wheatley, C F ^a   Titus, J L ^b   Burton, D I ^c  

^a Consultant ^*  (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

^c INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC CURRENTS; ENERGY TRANSFER; FAILURE ANALYSIS; GATES (TRANSISTOR); IONS; NUMERICAL METHODS; RADIATION DAMAGE; SEMICONDUCTING SILICON;

LINEAR ENERGY TRANSFER FUNCTION; POWER MOSFET DEVICES; SINGLE EVENT GATE RUPTURE;

MOSFET DEVICES;

EID: 0028693951     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.340556     Document Type: Article

References (13)

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