Power MOSFETs hardened for single event effects (SEE) in space

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 1995, Pages 253-257

  Carley, Donald R ^a   Wheatley, C Frank ^a   Titus, Jeff L ^a   Burton, Donald I ^a  

^a INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; DOSIMETRY; GATES (TRANSISTOR); POWER ELECTRONICS; RADIATION EFFECTS; RADIATION HARDENING; SATELLITE COMMUNICATION SYSTEMS; SPACE APPLICATIONS;

POWER MOSFETS; SINGLE EVENT EFFECTS; SINGLE EVENT GATE RUPTURE; TOTAL DOSE RESPONSE;

MOSFET DEVICES;

EID: 0029462802     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (9)