Single-Event Gate-Rupture in Power MOSFETs: Prediction of Breakdown Biases and Evaluation of Oxide Thickness Dependence

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1922-1927

  Allenspach, M ^a   Mouret, I ^b   Titus, J L ^c   Wheatley, C F ^d   Pease, R L ^e   Brews, J R ^a   Schrimpf, R D ^a   Galloway, K F ^a  

^a UNIVERSITY OF ARIZONA   (United States)

^b Aerospatiale   (France)

^c NAVAL SURFACE WARFARE CENTER   (United States)

^d RR2 Box 1120 ^*  (United States)

^e RLP Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN OF SOLIDS; FAILURE (MECHANICAL); GATES (TRANSISTOR); MATHEMATICAL MODELS; RADIATION EFFECTS;

BREAKDOWN BIASES; OXIDE THICKNESS DEPENDENCE; POWER TRANSISTORS; SINGLE EVENT GATE RUPTURE (SEGR); VERTICAL DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR (VDMOS);

MOSFET DEVICES;

EID: 0029545691     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489234     Document Type: Article

References (10)

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