Impact of Oxide Thickness on SEGR Failure in Vertical Power MOSFETs; Development of a Semi-Empirical Expression

IEEE Transactions on Nuclear Science

Volumn 42, Issue 6, 1995, Pages 1928-1934

  Titus, J L ^a   Wheatley, C F ^b   Burton, D I ^c   Mouret, I ^d   Allenspach, M ^d   Brews, J ^d   Schrimpf, R ^d   Galloway, K ^d   Pease, R L ^e  

^a NAVAL SURFACE WARFARE CENTER   (United States)

^b Consultant ^*  (United States)

^c INTERSIL CORPORATION   (United States)

^d UNIVERSITY OF ARIZONA   (United States)

^e RLP Research Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTATIONAL METHODS; ELECTRIC BREAKDOWN OF SOLIDS; FAILURE (MECHANICAL); GATES (TRANSISTOR); MATHEMATICAL MODELS; OXIDES; RADIATION EFFECTS;

GATE OXIDE THICKNESS; SINGLE EVENT GATE RUPTURE (SEGR); THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0029546524     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.489236     Document Type: Article

References (24)

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