Experimental evidence of the temperature and angular dependence in SEGR

Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS

Volumn , Issue , 1995, Pages 313-320

  Mouret, I ^a   Calvet, M C ^a   Calvel, P ^a   Tastet, P ^a   Allenspach, M ^a   LaBel, K A ^a   Titus, J L ^a   Wheatley, C F ^a   Schrimpf, R D ^a   Galloway, K F ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; ELECTRIC BREAKDOWN; ELECTRONS; GATES (TRANSISTOR); IONS; MOSFET DEVICES; OXIDES; SEMICONDUCTING SILICON; SENSITIVITY ANALYSIS; SUBSTRATES; THERMAL EFFECTS;

ANGULAR DEPENDENCE; DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR POWER DEVICES; SINGLE EVENT BURNOUT; SINGLE EVENT GATE RUPTURE; TEMPERATURE DEPENDENCE;

RADIATION EFFECTS;

EID: 0029462803     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)