A Conceptual Model of Single-Event Gate-Rupture in Power MOSFET's

IEEE Transactions on Nuclear Science

Volumn 40, Issue 6, 1993, Pages 1959-1966

  Brews, J R ^a   Allenspach, M ^a   Schrimpf, R D ^a   Galloway, K F ^a   Titus, J L ^b   Wheatley, C Frank ^c  

^a UNIVERSITY OF ARIZONA   (United States)

^b NAVAL SURFACE WARFARE CENTER   (United States)

^c NONE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; ELECTRIC CURRENTS; ELECTRONS; GATES (TRANSISTOR); IONS; MODELS; OXIDES; SHORT CIRCUIT CURRENTS;

ELECTRON HOLE PAIRS; HEAVY ION; HOLE COLLECTION; HOLE MOBILITY; OXIDE FIELDS; SINGLE EVENT GATE RUPTURE;

MOSFET DEVICES;

EID: 0027874496     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.273457     Document Type: Article

References (10)

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10. J.L. Titus and C.F. Wheatley, paper in preparation.