Development of cosmic ray hardened power MOSFET's

IEEE Transactions on Nuclear Science

Volumn 36, Issue 6, 1989, Pages 2375-2382

  Titus, Jeffrey L ^a   Jamiolkowski, Linda S ^b   Wheatley, C Frank ^b  

^a NAVAL SURFACE WARFARE CENTER   (United States)

^b INTERSIL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACCELERATORS; COSMIC RAYS; ION BEAMS;

DMOS (DOUBLE DIFFUSED METAL OXIDE SEMICONDUCTOR) DEVICES; SINGLE EVENT UPSETS;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0024942841     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.45451     Document Type: Article

References (5)

1. A. E. Waskiewicz, J. W. Groninger, V. H. Strahan, and D. M. Long, “Burnout of Power MOS Transistors with Heavy Ions of 252-Cf,” IEEE Trans. Nucl. Sci., NS-33, No. 6, Dec. 1986, pp 1710–1713.
2. D. L. Oberg and J. L. Wert, “First Nondestructive Measurements of Power MOSFET Single Event Burnout Cross Sections,” IEEE Trans. Nucl. Sci., NS-34, No 6, Dec. 1987, pp 1736–1741.
3. T. A. Fischer, “Heavy-Ion-Induced, Gate-Rupture in Power MOSFETs,” IEEE Trans. Nucl. Sci., NS-34, No 6, Dec. 1987, pp 1786–1791.
4. E. L. Petersen, J. B. Langworthy, and S. E. Diehl, “Suggested Single Event Upset Figure of Merit,” IEEE Trans. Nucl. Sci., NS-30, No. 6, Dec. 1983, pp 4533–4539.
5. M. Darwish, M. Dolly, C. Goodwin, and J. Titus, “Modeling of Radiation Induced Burnout in DMOS Transistors,” Technical Digest of IEEE International Electron Device Meeting (IEDM), Dec. 1988.