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Journal of Applied Physics
Volumn 63, Issue 12, 1988, Pages 5776-5793
Chemistry of Si-SiO2 interface trap annealing
Author keywords

[No Author keywords available]
Indexed keywords

EID: 0000953056     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.340317     Document Type: Article
Times cited : (259)
References (66)
  • 22
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    • Ph.D. thesis (Stanford University,)
    • (1985)
    • Eades, W.1
  • 41
    • 84950925134 scopus 로고
    • Technical Report T86012, Semiconductor Research Corporation, P.O. Box 12053, Research Triangle Park, NC
    • (1986) , vol.27709
    • Dadgar, S.1
  • 42
    • 84950750259 scopus 로고    scopus 로고
    • AG Associates, 1325 Borregas Ave., Sunnyvale, CA.
  • 48
    • 84950770395 scopus 로고    scopus 로고
    • For the doping levels in this experiment, a significant change in the kinetics would arise from the change in surface Fermi level at trap densities below approximately [formula omitted] Above this level, surface pinning by the interface traps will dominate. Since there is no abrupt change in the kinetics near this value, electrochemical effects do not appear to be important in the anneal process. In Sec. V B 3, we consider another approach to this question.
  • 53
    • 84950814176 scopus 로고
    • Ph.D. thesis (Stanford University,)
    • (1987)
    • Reed, M.L.1
  • 63
    • 84950922475 scopus 로고    scopus 로고
    • One might ask if interface traps couid be passivated by a hydroxyl group, leaving a structure like [formula omitted] at the interface. To our knowledge, this possibility has not been considered in the literature. The much higher anneal rate of metal gate devices (compared to polysilicon gates) suggests hydrogen, which diffuses faster than hydroxyl in [formula omitted] is a more likely candidate for defect passivation. We cannot, however, rule out the possibility of OH bonding at the interface with these experiments.

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