Post-irradiation cracking of H2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors

Journal of Applied Physics

Volumn 73, Issue 2, 1993, Pages 658-667

  Stahlbush, R E ^a   Edwards, A H ^b   Griscom, D L ^a   Mrstik, B J ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 21544471157     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.353348     Document Type: Article

References (0)