Application of Test Method 1019.4 to Non-Hardened Power MOSFETs

IEEE Transactions on Nuclear Science

Volumn 41, Issue 3, 1994, Pages 555-560

  Khosropour, P ^a   Galloway, K F ^a   Zupac, D ^a   Schrimpf, R D ^a   Calvel, P ^a  

^a THALES ALENIA SPACE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DOSIMETRY; ELECTRIC GROUNDING; ELECTRONIC EQUIPMENT TESTING; FORECASTING; GATES (TRANSISTOR); HIGH TEMPERATURE OPERATIONS; MODIFICATION; RADIATION EFFECTS; SPACE APPLICATIONS;

DOSE RATE; TEST METHOD; THRESHOLD VOLTAGE SHIFT;

MOSFET DEVICES;

EID: 0028447729     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.299798     Document Type: Article

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