Processes in n-channel MOSFETS during postirradiation thermal annealing

Radiation Physics and Chemistry

Volumn 49, Issue 5, 1997, Pages 521-525

  Pejovic M ^a   Jaksic A ^a   Ristic G ^a   Baljosevic B ^b  

^a Faculty of the Electric Eng   (Yugoslavia)

^b Faculty of Natural Sciences   (Yugoslavia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GAMMA RAYS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; MOSFET DEVICES; OXIDES; PASSIVATION;

GAMMA RAY IRRADIATION; THERMAL ANNEALING;

IRRADIATION;

METAL OXIDE; SILICON DIOXIDE;

ARTICLE; ELECTRIC POTENTIAL; GAMMA IRRADIATION; HARDNESS; RADIATION DOSE; SEMICONDUCTOR; THERMAL EXPOSURE;

EID: 0343471879     PISSN: 0969806X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0969-806X(96)00181-8     Document Type: Article

References (26)

1. Brown, D. B., Ma, D. I., Dozier, C. M. and Peckerar, M. C. (1983) Thermal annealing of radiation induced defects: a diffusion-limited process? IEEE Trans. Nucl. Sci. 30, 4059-4063.
2. 2 interface by atomic hydrogen. Appl. Phys. Lett. 63, 1510-1512.
3. Fleetwood, D. M., Shaneyfelt, M. R., Riewe, L. C., Winokur, P. S. and Reber, R. A. (1993) The role of border traps in MOS high-temperature postirradiation annealing response. IEEE Trans. Nucl. Sci. 40, 1323-1334.
4. Fleetwood, D. M., Winokur, P. S., Barnes, C. E. and Shaw, D. C. (1994) Accounting for time-dependent effects on CMOS total-dose response in space environments. Radiat. Phys. Chem. 43/2, 129-138.
5. 2-on-Si structures. J. Appl. Phys. 58, 2524-2533.
6. 2-Si Interface (Edited by Helms, C. R. and Deal, B. E.), pp. 287-294. Plenum Press, New York.
7. Jakšić, A., Ristić, G. and Pejović, M. (1995) Rebound effect in power VDMOSFETs due to latent interface-trap generation. Electron. Lett. 31, 1198-1199.
8. Khosropour, P., Galloway, K. F., Zupac, D., Schrimpf, R. D. and Calvel, P. (1994a) Application of test method 1019.4 to non-hardened power MOSFETs. In RADECS Record (1993) pp. 300-305 and IEEE Trans. Nucl. Sci. 41, 555-560.
9. Khosropour, P., Galloway, K. F., Zupac, D., Schrimpf, R. D. and Calvel, P. (1994a) Application of test method 1019.4 to non-hardened power MOSFETs. In RADECS Record (1993) pp. 300-305 and IEEE Trans. Nucl. Sci. 41, 555-560.
10. Khosropour, P., Fleetwood, D. M., Galloway, K., F., Schrimpf, R. D. and Calvel, P. (1994b) Evaluation of a method for estimating low-dose-rate irradiation response of MOSFETs. IEEE Trans. Nucl. Sci. 41, 2560-2566.
11. Lai, S. K. (1983) Interface trap generation in silicon dioxide when electrons are captured by trapped holes. J. Appl. Phys. 54, 2540-2546.
12. Ma, T. P. and Dressendorfer, P.V. (Eds) (1989) Ionizing Radiation Effects in MOS Devices and Circuits. New York, Wiley-Interscience.
13. 2 MOS structures. IEEE Trans. Nucl. Sci. 27, 1651-1657.
14. McWhorter, P. J. and Winokur, P. S. (1986) Simple technique for separating the effects of interface traps and trapped-oxide charge in metal-oxide-semiconductor transistors. Appl. Phys. Lett. 48, 133-135.
15. McWhorter, P. J., Miller, S. L. and Miller, W. M. (1990) Modeling the anneal of radiation-induced trapped holes in a varying thermal environment. IEEE Trans. Nucl. Sci. 37, 1682-1689.
16. Oldham, T. R., Lelis, A. J. and McLean, F. B. (1986) Spatial dependence or trapped holes determined from tunneling analysis and measured annealing. IEEE Trans. Nucl. Sci. 33, 1203-1209.
17. Oldham, T. R., Boesch, H. E., McLean, F. B. and McGarrity, J. M. (1989) An overview of radiation-induced interface traps in MOS structures. Semicond. Sci. Technol. 4, 986-999.
18. Pejović, M., Golubović, S., Ristić, G. and Odalović, M. (1994) Annealing of gamma-irradiated Al-gate NMOS transistors. Solid-St. Electron. 37, 215-216.
19. 2 interface trap annealing. J. Appl. Phys. 63, 5776-5793.
20. + process. IEEE Trans. Nucl. Sci. 36, 1848-1857.
21. Saks, N. S., Dozier, C. M. and Brown, D. B. (1988) Time dependence of interface trap formation in MOSFETs following pulsed irradiation. IEEE Trans. Nucl. Sci. 35, 1168-1177.
22. Schwank, J. R., Winokur, P. S., McWhorter, P. J., Sexton, F. W., Dressendorfer, P. V. and Turpin, D. C. (1984) Physical mechanisms contributing to device rebound. IEEE Trans. Nucl. Sci. 31, 1434-1438.
23. Schwank, J. R., Fleetwood, D. M., Shaneyfelt, M. R. and Winokur, P. S. (1992) Latent thermally activated interface-trap generation in MOS devices. IEEE Electron Dev. Lett. 13, 203-205.
24. Stahlbush, R. E., Lawrence, R. K., Hughes, H. L. and Saks, N. S. (1988) Annealing of total dose damage: redistribution of interface state density on 100, 110 and 111 orientation silicon. IEEE Trans. Nucl. Sci. 35, 1192-1196.
25. 2 and formation of interface states in irradiated metal-oxide-semiconductor field-effect transistors. J. Appl. Phys. 73, 658-667.
26. Wang, S. J., Sung, J. M. and Lyon, S. A. (1988) Relationship between hole trapping and interface state generation in metal-oxide-silicon structures. Appl. Phys. Lett. 52, 1431-1433.