-
1
-
-
0029516201
-
CMOS image sensors: Electronic camera-on-a-chip in
-
1995 pp. 17-25.
-
E. R. Fossum CMOS image sensors: Electronic camera-on-a-chip in IEEE IEDM Tech. Dig. 1995 pp. 17-25.
-
IEEE IEDM Tech. Dig.
-
-
Fossum, E.R.1
-
3
-
-
50549210592
-
A new type of photosensitive junction device
-
vol. 5 pp. 485-494 1963.
-
S. Morrison A new type of photosensitive junction device Solid-State Electron. vol. 5 pp. 485-494 1963.
-
Solid-State Electron.
-
-
Morrison, S.1
-
4
-
-
79956131413
-
The scanistor - A solid-state image scanner in
-
vol. 52 pp. 1513-1528 1964.
-
J. Horton R. Mazza and H. Dym The scanistor - A solid-state image scanner in Proc. IEEE vol. 52 pp. 1513-1528 1964.
-
Proc. IEEE
-
-
Horton, J.1
Mazza, R.2
Dym, H.3
-
5
-
-
1842754852
-
A monolithic mosaic of photon sensors for solid state imaging applications
-
13 pp. 907-912 1966.
-
M. A. Schuster and G. Strull A monolithic mosaic of photon sensors for solid state imaging applications IEEE Trans. Electron Devices vol. ED-13 pp. 907-912 1966.
-
IEEE Trans. Electron Devices Vol. ED
-
-
Schuster, M.A.1
Strull, G.2
-
6
-
-
0003076608
-
Operation of p-n junction photodetectors in a photon flux integration mode
-
2 pp. 65-73 1967.
-
G. P. Weckler Operation of p-n junction photodetectors in a photon flux integration mode IEEE J. Solid-State Circuits vol. SC-2 pp. 65-73 1967.
-
IEEE J. Solid-State Circuits Vol. SC
-
-
Weckler, G.P.1
-
9
-
-
0000385677
-
Self-scanned silicon image detector arrays
-
15 pp. 202-209 Apr. 1968.
-
P. Noble Self-scanned silicon image detector arrays IEEE Trans. Electron Devices vol. ED-15 pp. 202-209 Apr. 1968.
-
IEEE Trans. Electron Devices Vol. ED
-
-
Noble, P.1
-
10
-
-
0014621751
-
Photosensitivity and scanning of silicon image detector arrays
-
4 pp. 333-342 June 1969.
-
S. G. Chamberlain Photosensitivity and scanning of silicon image detector arrays IEEE J. Solid-State Circuits vol. SC-4 pp. 333-342 June 1969.
-
IEEE J. Solid-State Circuits Vol. SC
-
-
Chamberlain, S.G.1
-
12
-
-
0014764318
-
Charge-coupled semiconductor devices
-
vol. 49 pp. 587-593 1970.
-
W. S. Boyle and G. E. Smith Charge-coupled semiconductor devices Bell Syst. Tech. J. vol. 49 pp. 587-593 1970.
-
Bell Syst. Tech. J.
-
-
Boyle, W.S.1
Smith, G.E.2
-
13
-
-
0017537641
-
A CMOS/buried-n-channel CCD compatible process for analog signal processing applications
-
vol. 38 no. 3 pp. 406-435 1977.
-
R. Dawson J. Preisig J. Carnes and J. Pridgen A CMOS/buried-n-channel CCD compatible process for analog signal processing applications RCA Rev. vol. 38 no. 3 pp. 406-435 1977.
-
RCA Rev.
-
-
Dawson, R.1
Preisig, J.2
Carnes, J.3
Pridgen, J.4
-
15
-
-
33747735273
-
An integrated CMOS/CCD sensor for camera autofocus in
-
88: Int. Electron. Imag. Expo and Conf. Waltham MA 1988 vol. 1 pp. 159-163.
-
C. Anagnostopoulos C. Ludden G. Brown and K. Wong An integrated CMOS/CCD sensor for camera autofocus in Electronic Imaging '88: Int. Electron. Imag. Expo and Conf. Waltham MA 1988 vol. 1 pp. 159-163.
-
Electronic Imaging '
-
-
Anagnostopoulos, C.1
Ludden, C.2
Brown, G.3
Wong, K.4
-
16
-
-
0015626506
-
The tradeoff in monolithic image sensors: MOS versus CCD
-
vol. 46 pp. 106-111 May 1973.
-
R. Melen The tradeoff in monolithic image sensors: MOS versus CCD Electron. vol. 46 pp. 106-111 May 1973.
-
Electron.
-
-
Melen, R.1
-
17
-
-
0019047401
-
MOS area sensor: Part II - Low noise MOS area sensor with anti-blooming photodiodes IEEE Trans
-
27 pp. 1682-1687 Aug. 1980.
-
S. Ohba et al. MOS area sensor: Part II - Low noise MOS area sensor with anti-blooming photodiodes IEEE Trans. Electron Devices vol. ED-27 pp. 1682-1687 Aug. 1980.
-
Electron Devices Vol. ED
-
-
Ohba, S.1
-
19
-
-
0020114908
-
A 2/3-inch format MOS single-chip color imager IEEE Trans
-
29 pp. 745-750 Apr. 1982.
-
M. Aoki et al. A 2/3-inch format MOS single-chip color imager IEEE Trans. Electron Devices vol. ED-29 pp. 745-750 Apr. 1982.
-
Electron Devices Vol. ED
-
-
Aoki, M.1
-
20
-
-
0022435506
-
Design consideration and performance of a new MOS imaging device IEEE Trans
-
32 pp. 1484-1489 May 1985.
-
H. Ando et al. Design consideration and performance of a new MOS imaging device IEEE Trans. Electron Devices vol. ED-32 pp. 1484-1489 May 1985.
-
Electron Devices Vol. ED
-
-
Ando, H.1
-
21
-
-
84948597572
-
An electronic variable shutter system in video camera use IEEE Trans
-
33 pp. 249-255 1987.
-
T. Kinugasa et al. An electronic variable shutter system in video camera use IEEE Trans. Consumer Electron. vol. CE-33 pp. 249-255 1987.
-
Consumer Electron. Vol. CE
-
-
Kinugasa, T.1
-
23
-
-
0024619686
-
XYW detector: A smart two-dimensional particle sensor
-
vol. 275 p. 527 1989.
-
B. Dierckx XYW detector: A smart two-dimensional particle sensor Nucl. Instrum. Methods Phys. Res. A vol. 275 p. 527 1989.
-
Nucl. Instrum. Methods Phys. Res. a
-
-
Dierckx, B.1
-
32
-
-
0022069574
-
A new MOS phototransistor operating in a nondestructive readout mode Jpn
-
vol. 24 no. 5 pp. L323-L325 1985.
-
K. Matsumoto et al. A new MOS phototransistor operating in a nondestructive readout mode Jpn. J. Appl. Phys. vol. 24 no. 5 pp. L323-L325 1985.
-
J. Appl. Phys.
-
-
Matsumoto, K.1
-
33
-
-
0022736072
-
SIT image sensor: Design considerations and characteristics IEEE Trans
-
33 pp. 735-742 June 1986.
-
A. Yusa et al. SIT image sensor: design considerations and characteristics IEEE Trans. Electron Devices vol. ED-33 pp. 735-742 June 1986.
-
Electron Devices Vol. ED
-
-
Yusa, A.1
-
34
-
-
0025415050
-
A 310 pixel bipolar imager (BASIS) IEEE Trans
-
vol. 37 pp. 964-971 Apr. 1990.
-
N. Tanaka et al. A 310 pixel bipolar imager (BASIS) IEEE Trans. Electron Devices vol. 37 pp. 964-971 Apr. 1990.
-
Electron Devices
-
-
Tanaka, N.1
-
35
-
-
0024011917
-
A new device architecture suitable for high-resolution and high-performance image sensors
-
vol. 35 pp. 646-652 Mar. 1988.
-
J. Hynecek A new device architecture suitable for high-resolution and high-performance image sensors IEEE Trans. Electron Devices vol. 35 pp. 646-652 Mar. 1988.
-
IEEE Trans. Electron Devices
-
-
Hynecek, J.1
-
37
-
-
0020918232
-
A high sensitivity IL-CCD image sensor with monolithic resin lens array in
-
1983 pp. 497-500.
-
Y. Ishihara and K. Tanigaki A high sensitivity IL-CCD image sensor with monolithic resin lens array in IEEE IEDM Tech. Dig. 1983 pp. 497-500.
-
IEEE IEDM Tech. Dig.
-
-
Ishihara, Y.1
Tanigaki, K.2
-
42
-
-
0025449034
-
A novel amplified image sensor with a-Si:H photoconductor and MOS transistors
-
vol. 37 pp. 1432-1438 June 1990.
-
Z.-S. Huang and T. Ando A novel amplified image sensor with a-Si:H photoconductor and MOS transistors IEEE Trans. Electron Devices vol. 37 pp. 1432-1438 June 1990.
-
IEEE Trans. Electron Devices
-
-
Huang, Z.-S.1
Ando, T.2
-
46
-
-
0026206567
-
New MOS imager using photodiode as current source
-
vol. 26 pp. 1116-1122 Aug. 1991.
-
M. Kyomasu New MOS imager using photodiode as current source IEEE J. Solid-State Circuits vol. 26 pp. 1116-1122 Aug. 1991.
-
IEEE J. Solid-State Circuits
-
-
Kyomasu, M.1
-
47
-
-
0026202820
-
A random access photodiode array for intelligent image capture
-
vol. 38 pp. 1772-1780 Aug. 1991.
-
O. Yadid-Pecht R. Ginosar and Y. Diamand A random access photodiode array for intelligent image capture IEEE. Trans. Electron Devices vol. 38 pp. 1772-1780 Aug. 1991.
-
IEEE. Trans. Electron Devices
-
-
Yadid-Pecht, O.1
Ginosar, R.2
Diamand, Y.3
-
48
-
-
0030411452
-
A 128 × 128 pixel standard CMOS image sensor with electronic shutter
-
vol. 31 pp. 1922-1930 Dec. 1996.
-
C. Aw and B. Wooley A 128 × 128 pixel standard CMOS image sensor with electronic shutter IEEE J. Solid-State Circuits vol. 31 pp. 1922-1930 Dec. 1996.
-
IEEE J. Solid-State Circuits
-
-
Aw, C.1
Wooley, B.2
-
53
-
-
0027813049
-
A 128 × 128 CMOS active pixel image sensor for highly integrated imaging systems in
-
1993 pp. 583-586.
-
S. Mendis S. Kemeny and E. R. Fossum A 128 × 128 CMOS active pixel image sensor for highly integrated imaging systems in IEEE IEDM Tech. Dig. 1993 pp. 583-586.
-
IEEE IEDM Tech. Dig.
-
-
Mendis, S.1
Kemeny, S.2
Fossum, E.R.3
-
54
-
-
0028392939
-
CMOS active pixel image sensor
-
vol. 41 pp. 452-453 Mar. 1994.
-
_ CMOS active pixel image sensor IEEE Trans. Electron Devices vol. 41 pp. 452-453 Mar. 1994.
-
IEEE Trans. Electron Devices
-
-
-
57
-
-
33747721145
-
-
1996 unpublished.
-
E. R. Fossum 1996 unpublished.
-
-
-
Fossum, E.R.1
-
60
-
-
33747663296
-
A novel wide dynamic range silicon photodetector and linear imaging array in
-
1983 pp. 441-445.
-
S. G. Chamberlain and J. Lee A novel wide dynamic range silicon photodetector and linear imaging array in Proc. IEEE Custom Integrated Circuits Conf. 1983 pp. 441-445.
-
Proc. IEEE Custom Integrated Circuits Conf.
-
-
Chamberlain, S.G.1
Lee, J.2
-
63
-
-
0026923362
-
Pixel structure with logarithmic response for intelligent and flexible imager architectures
-
vol. 19 pp. 631-634 1992.
-
N. Ricquier and B. Dierickx Pixel structure with logarithmic response for intelligent and flexible imager architectures Microelectron. Eng. vol. 19 pp. 631-634 1992.
-
Microelectron. Eng.
-
-
Ricquier, N.1
Dierickx, B.2
-
64
-
-
33747698120
-
Active pixel CMOS image sensor with on-chip nonuniformity correction presented at 1995
-
20-22 1995.
-
_ Active pixel CMOS image sensor with on-chip nonuniformity correction presented at 1995 IEEE Workshop on CCD's and Advanced Image Sensors Dana Point CA Apr. 20-22 1995.
-
IEEE Workshop on CCD's and Advanced Image Sensors Dana Point CA Apr.
-
-
-
68
-
-
0029379393
-
A CMOS active pixel image sensor with simple floating gate pixels
-
vol. 42 pp. 1693-1694 Sept. 1995.
-
J. Nakamura S. E. Kemeny and E. R. Fossum A CMOS active pixel image sensor with simple floating gate pixels IEEE Trans. Electron Devices vol. 42 pp. 1693-1694 Sept. 1995.
-
IEEE Trans. Electron Devices
-
-
Nakamura, J.1
Kemeny, S.E.2
Fossum, E.R.3
-
71
-
-
33747726247
-
Design of an image sensor using a neuron MOSFET with image smoothing capabilityCharge-Coupled
-
vol. 2172 pp. 30-37 1994.
-
J. Nakamura and E. R. Fossum Design of an image sensor using a neuron MOSFET with image smoothing capabilityCharge-Coupled Devices and Solid State Optical Sensors IV Proc. SPIE vol. 2172 pp. 30-37 1994.
-
Devices and Solid State Optical Sensors IV Proc. SPIE
-
-
Nakamura, J.1
Fossum, E.R.2
-
77
-
-
30244457590
-
Readout schemes to increase dynamic range of image sensors
-
vol. 21 no. 1 pp. 32-33 Jan. 1997.
-
O. Yadid-Pecht and E. R. Fossum Readout schemes to increase dynamic range of image sensors NASA Tech. Briefs vol. 21 no. 1 pp. 32-33 Jan. 1997.
-
NASA Tech. Briefs
-
-
Yadid-Pecht, O.1
Fossum, E.R.2
-
79
-
-
0026898298
-
Industrial CMOS technology for the integration of optical metrology systems (photo-ASIC's)
-
34 pp. 21-30 1992.
-
J. Kramer P. Sietz and H. Baltes Industrial CMOS technology for the integration of optical metrology systems (photo-ASIC's) Sens. Actuators vol. A34 pp. 21-30 1992.
-
Sens. Actuators Vol. a
-
-
Kramer, J.1
Sietz, P.2
Baltes, H.3
-
82
-
-
0029727272
-
Readout concept employing novel on-chip 16 bit ADC for smart IR focal plane arrays
-
vol. 2745 pp. 99-109 1996.
-
U. Ringh C. Jansson and K. Liddiard Readout concept employing novel on-chip 16 bit ADC for smart IR focal plane arrays Infrared Readout Electronics III Proc. SPIE vol. 2745 pp. 99-109 1996.
-
Infrared Readout Electronics III Proc. SPIE
-
-
Ringh, U.1
Jansson, C.2
Liddiard, K.3
-
83
-
-
33747664634
-
Development of high-speed IR sensor chip technologies Infrared Readout Electronics III Proc
-
vol. 2745 pp. 22-39 1996.
-
M. Dahlin et al. Development of high-speed IR sensor chip technologies Infrared Readout Electronics III Proc. SPIE vol. 2745 pp. 22-39 1996.
-
SPIE
-
-
Dahlin, M.1
-
85
-
-
0002726275
-
Approaches and analysis for on-focal-plane analog-to-digital conversion
-
vol. 2226 pp. 208-218 1994.
-
B. Pain and E. R. Fossum Approaches and analysis for on-focal-plane analog-to-digital conversion Infrared Readout Electronics II Proc. of SPIE vol. 2226 pp. 208-218 1994.
-
Infrared Readout Electronics II Proc. of SPIE
-
-
Pain, B.1
Fossum, E.R.2
-
88
-
-
0028135762
-
A CMOS area image sensor with pixel-level A/D conversion
-
1994 pp. 226-227.
-
B. Fowler A. Gamal and D. Yang A CMOS area image sensor with pixel-level A/D conversion ISSCC Dig. Tech. Papers 1994 pp. 226-227.
-
ISSCC Dig. Tech. Papers
-
-
Fowler, B.1
Gamal, A.2
Yang, D.3
-
89
-
-
0029727995
-
Design and operation of self-biased high-gain amplifier arrays for photon-counting sensors
-
vol. 2745 pp. 69-77 1996.
-
B. Pain and E. R. Fossum Design and operation of self-biased high-gain amplifier arrays for photon-counting sensors Infrared Readout Electronics III Proc. SPIE vol. 2745 pp. 69-77 1996.
-
Infrared Readout Electronics III Proc. SPIE
-
-
Pain, B.1
Fossum, E.R.2
-
91
-
-
0030378204
-
Technology and scaling considerations for CMOS imagers
-
vol. 43 pp. 2131-2142 Dec. 1996.
-
P. Wong Technology and scaling considerations for CMOS imagers IEEE Trans. Electron Devices vol. 43 pp. 2131-2142 Dec. 1996.
-
IEEE Trans. Electron Devices
-
-
Wong, P.1
|