CMOS Active Pixel Image Sensor with Simple Floating Gate Pixels

IEEE Transactions on Electron Devices

Volumn 42, Issue 9, 1995, Pages 1693-1694

  Nakamura, Jun ichi ^a   Kemeny, Sabrina E ^a   Fossum, Eric R ^a  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; CAPACITORS; CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; DIFFUSION; GATES (TRANSISTOR); MOSFET DEVICES; NETWORK COMPONENTS; NONDESTRUCTIVE READOUT; OVERVOLTAGE PROTECTION; SIGNAL TO NOISE RATIO;

ACTIVE PIXEL SENSOR; BARRIER GATE; COUPLING CAPACITOR; IMAGE LAG; PHOTOGATE; SIMPLE FLOATING GATE;

IMAGE SENSORS;

EID: 0029379393     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.405286     Document Type: Article

References (3)

1. E. R. Fossum, “Active pixel sensors—Are CCD's dinosaurs?” in Charge-Coupled Devices and Solid State Optical Sensors III, Proc. SPIE, 1993, vol. 1900, pp. 2–14.
2. S. K. Mendis, S. E. Kemeny, and E. R. Possum, “CMOS active pixel image sensor,” IEEE Trans. on Electron Devices, vol. 41, no. 3, pp. 452–453, Mar. 1994.
3. S. Mendis, S. E. Kemeny, R. C. Gee, B. Pain, Q. Kim, and E. R. Fossum, “Progress in CMOS active pixel image sensors,” in Charge-Coupled Devices and Solid-State Optical Sensors IV. Proc. SPIE. 1994, vol. 2172, pp. 19–29.