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Analog Integrated Circuits and Signal Processing

Volumn 4, Issue 1, 1993, Pages 37-49

An addressable 256×256 photodiode image sensor array with an 8-bit digital output

(4) Jansson, Christer a Ingelhag, Per a,b Svensson, Christer b Forchheimer, Robert a

a IVP Integrated Vision Products AB ^* (Sweden)

b LINKÖPING UNIVERSITY (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0002258853 PISSN: 09251030 EISSN: 15731979 Source Type: Journal
DOI: 10.1007/BF01240678 Document Type: Article

Times cited : (26)

References (14)

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2
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- A random access photodiode array for intelligent image capture
- Electron Devices
- O. Yadid-Pecht, R. Ginosar, and Y.S. Diamand, “A random access photodiode array for intelligent image capture,”IEEE Trans. Electron Devices, Vol. 38, No. 8, Aug. 1991.
- (1991) IEEE Transactions on Electron Devices , vol.38 , Issue.8
- Yadid-Pecht, O.¹ Ginosar, R.² Diamand, Y.S.³

3
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- S. Manabe, Y. Mastunaga, A. Furukawa, K. Yuano, R. Miyagawa, Y. Iida, Yositaka Egawa, H. Shibata, H. Nozaki, N. Sakuma, and N. Harada, “A 2-million-pixel CCD image sensor overlaid with an amorphous silicon photoconversion layer,”IEEE Trans. Electron Devices, Vol. 38, No. 8, Aug. 1991.

4
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- R. Forchheimer, P. Ingelhag, and C. Jansson, “MAPP2200: A second generation smart optical sensor,” in Proc. Processing and Interchange, SPIE'92, San Jose, CA, Feb. 1992.

5
- 84936185268
- R. Forchheimer and A. Ödmark, “A single chip linear array picture processor,” in Proc. Applications of Digital Image Processing, SPIE'83, Geneva, Switzerland, April 1983.

6
- 84936194839
- K. Chen, M. Afghahi, P.E. Danielsson, and C. Svensson, “PASIC. A processor-A/D converter-sensor integrated circuit,” in IEEE Int. Symp. Circuits and Systems, New Orleans, LA, Vol. 3, May 1–3, 1990.

7
- 84936219247
- S. Ohba, M. Nakai, H Ando, K.S. Hanamura, S. Shimada, K. Satoh, K. Takahashi, M. Kubo, and T. Fujita, “MOS area sensor. Part II. Low-noise MOS area sensor with antiblooming photodiodes,”IEEE Trans. Electron Devices, Vol. ED-27, No. 8, Aug. 1980.

8
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- E. Oda, Y. Ishihara, and N. Teranishi, “Blooming suppression mechanism for an interline CCD image sensor with a vertical overflow drain,”IEDM Tech. Dig., p. 501, 1983.

9
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- T. Kumesawa, M. Yamamura, H. Terakawa, H. Murata, H. Matsumoto, and S. Ochi, “High-resolution CCD image sensors with reduced smear,”IEEE Trans. Electron Devices, Vol. ED-32, No. 8, Aug. 1985.

10
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- K.A. Sakallah, Y.T. Yen, and S.S. Greenberg, “A first-order charge conserving MOS capacitance model,”Trans. Computer-Aided Design, Vol. 9, No. 1, Jan. 1990.

11
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- E.G. Stevens, “Photoresponse nonlinearity of solid-state image sensors with antiblooming protection,”IEEE Trans. Electron Devices, Vol. 38, No. 2, Feb. 1991.

12
- 0019245403
- An 8-bit 5 ns monolithic D/A converter subsystem
- (1980) IEEE Journal of Solid-State Circuits , vol.15 SC , pp. 1033-1039
- Saul, P.H.¹ Ward, P.J.² Fryers, A.J.³

13
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- Sensitivity and resolution of charge-coupled imagers at low light levels
- (1972) RCA Rev. , vol.33 , pp. 607-622
- Carnes, J.E.¹ Kosonocky, W.F.²

14
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- S. Ohba, M. Nakai, H Ando, K. Takahashi, M. Masuda, Iwao Takemoto, and T. Fujita, “Vertical smear noise model for an MOS-type color imager,”IEEE Trans. Electron Devices, Vol. ED-32, No. 8, August 1985.

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