MOS Area Sensor: Part II—Low-Noise MOS Area Sensor with Antiblooming Photodiodes

IEEE Transactions on Electron Devices

Volumn 27, Issue 8, 1980, Pages 1682-1687

  Ohba, Shinya ^a   Nakai, Masaaki ^a   Ando, Haruhisa ^a   Hanamura, Shoji ^a   Satoh, Kazuhiro ^a   Takahashi, Kenji ^a   Kubo, Masaharu ^a   Shimada, Shigeru ^a   Fujita, Tsutomu ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS - VERY LARGE SCALE INTEGRATION; SEMICONDUCTOR DEVICES, MOS;

IMAGE SENSORS;

EID: 0019047401     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1980.20088     Document Type: Article

References (17)

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