Design Consideration and Performance of a New MOS Imaging Device

IEEE Transactions on Electron Devices

Volumn 32, Issue 8, 1985, Pages 1484-1489

  Ando, Haruhisa ^a   Ohba, Shinya ^a   Nakai, Masaaki ^a   Ozaki, Toshifumi ^a   Ozawa, Naoki ^a   Ikeda, Kiyoji ^a   Masuhara, Toshiaki ^a   Imaide, Takuya ^a   Takemoto, Iwao ^a   Suzuki, Toshiki ^a   Fujita, Tsutomu ^a  

^a HITACHI LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE PROCESSING; NOISE, SPURIOUS SIGNAL; SEMICONDUCTOR DEVICES, MOS; TELEVISION EQUIPMENT - CAMERAS;

BCD REGISTER; CHARGE TRANSFER EFFICIENCY; RANDOM NOISE SUPPRESSION (RANS); TV IMAGE SENSORS;

IMAGE SENSORS;

EID: 0022435506     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22150     Document Type: Article

References (11)

1. M. Aoki et al., “MOS color imaging device,” in ISSCC Dig. Tech. Papers, pp. 2627, 1980.
2. Y. Ishihara et al, “Interline CCD image sensor with an anti-blooming blooming structure,” in ISSCC Dig. Tech. Papers, pp. 168469, 1982.
3. H. Matsumoto et al., “IL CCD imager with MOS photosensor using high resistivity MCZ substrate,” J. Inst. Telev. Eng. Japan, vol. 6, no. 45, pp. 3540, Mar. 1983.
4. S. Ohba et al., “MOS imaging with random noise suppression,” in ISSCC Dig. Tech. Papers, pp. 2627, 1984.
5. M. Kubo et al., “A wide band low-noise delay line,” in ISSCC Dig. Tech. Papers, pp. 152153, 1974.
6. H. Ando et al., “Low-noise shift register for MOS imaging device,” in 1980 National Conv. Rec., Inst. Telev. Eng. Japan, pp. 2526, July 1980.
7. I. Takemoto et al., “Spectral response of solid state imager for single chip color camera,” in 1979 Nat. Conv. Rec., Inst. Telev. Eng. Japan, pp. 3738, July 1979.
8. P. G. Jespers et al. “A fast sample-and-hold charge sensing circuit for photo arrays,” IEEE J. Solid-State Circuits, vol. SC-12, no. 3, 232, 1977.
9. C. H. Sequin and M. F. Tompsett, Charge Transfer Device. New York: Academic, 1975.
10. T. Ozaki et al., “Noise modeling for new MOS imaging device using random noise suppression (RANS) circuits,” in ICSSDM Dig. Tech. Papers, pp. 337340, 1984.
11. M. Nakai et al. “Si substrate for low noise color image sensor,” in ICSSDM Dig. Tech. Papers, pp. 491494, 1984.