A New Device Architecture Suitable for High-Resolution and High-Performance Image Sensors

IEEE Transactions on Electron Devices

Volumn 35, Issue 5, 1988, Pages 646-652

  Hynecek, Jaroslav ^a  

^a TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DEVICES; TELEVISION EQUIPMENT - CAMERAS; TRANSISTORS, FIELD EFFECT - JUNCTIONS;

BLOOMING OVERLOAD PROTECTION; INTRINSIC EXPOSURE CONTROL; JUNCTION FET (JFET); PHOTOGENERATED SIGNAL SAMPLING;

IMAGE SENSORS;

EID: 0024011917     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.2508     Document Type: Article

References (5)

1. N. Teranishi and Y. Ishihara, “Smear reduction in interline CCD image sensor,” IEEE Trans. Electron Devices, vol. ED-34, pp. 1052-1056, May 1987.
2. K. Horii, T. Kuroda, Y. Matsuda, T. Nobusada, T. Kuriyama, and S. Matsumoto, “502(V) x 600(H) FIT-CCD image sensor,” ITEJ Tech. Rep., vol. 10, no. 52, pp. 19-24, Feb. 1987.
3. T. Yamada, K. Ikeda, and N. Suzuki, “A line-address CCD image sensor,” in ISSCC Dig. Tech. Papers, vol. 30, pp. 106-107, Feb. 1987.
4. T. Izawa, T. Miyazawa, S. Nishizawa, A. Hayasaka, T. Suzuki, M. Uehara, H. Soukei, and I. Takemoto, “Transversal signal line imager with variable electronic shutter function,” ITEJ Tech. Rep., vol. 10, no. 52, pp. 31-36, Feb. 1987.
5. T. Nakamura, K. Matsumoto, R. Hyuga, and A. Yusa, “A new MOS image sensor operating in a non-destructive readout mode,” in IEDM Tech. Dig., pp. 353-356, Dec. 1986.