A new mos phototransistor operating in a non-destructive readout mode

Japanese Journal of Applied Physics

Volumn 24, Issue 5 A, 1985, Pages 323-325

  Matsumoto, Kazuya ^a   Nakamura, Tsutomu ^a   Yusa, Atsushi ^a   Nagai, Shohei ^a  

^a OLYMPUS CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

IMAGING TECHNIQUES; SEMICONDUCTOR DEVICES, MOS; SENSORS;

MOS PHOTOTRANSISTOR; NON-DESTRUCTIVE READOUT MODE;

TRANSISTORS, PHOTOSENSITIVE;

EID: 0022069574     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.24.L323     Document Type: Article

References (5)

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3. J. Nishizawa, T. Tamamushi and S. Suzuki: Semiconductor Technology (Ohmsha, Tokyo, 1983) Vol. 8, Chap. 17, p. 219.
4. J. Nishizawa, T. Tamamushi and T. Ohmi: IEEE Trans. Electron Devices ED-26 (1979) 1970.
5. P. K. Chatterjee, G. W. Talyor and M. L. Malwah: IEEE Int. Electron Device Meeting, Late News (Washington, D.C. 1978).