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Volumn 33, Issue 6, 1986, Pages 735-742

SIT Image Sensor: Design Considerations and Characteristics

Author keywords

[No Author keywords available]

Indexed keywords

IMAGE PROCESSING; SOLID STATE DEVICES; TRANSISTORS;

EID: 0022736072     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1986.22562     Document Type: Article
Times cited : (23)

References (18)
  • 1
    • 50549210592 scopus 로고
    • A new type of photosensitive junction device
    • S. R. Morrison, “A new type of photosensitive junction device,” Solid-State Electron., vol. 5, pp. 485–494, 1963.
    • (1963) Solid-State Electron , vol.5 , pp. 485-494
    • Morrison, S.R.1
  • 2
    • 79956131413 scopus 로고
    • The scanistor—A solid-state image scanner
    • Dec.
    • J. W. Horton, R. V. Mazza, and H. Dym, “The scanistor—A solid-state image scanner,” in Proc. IEEE, vol. 52, pp. 1513–1528, Dec. 1964.
    • (1964) Proc. IEEE , vol.52 , pp. 1513-1528
    • Horton, J.W.1    Mazza, R.V.2    Dym, H.3
  • 3
    • 0014764318 scopus 로고
    • Charge coupled semiconductor devices
    • W. S. Boyle and G. E. Smith, “Charge coupled semiconductor devices,” Bell Syst. Tech. J., vol. 49, pp. 587–593. 1970.
    • (1970) Bell Syst. Tech. J , vol.49 , pp. 587-593
    • Boyle, W.S.1    Smith, G.E.2
  • 4
    • 84941466660 scopus 로고
    • Semiconductor photo-electric converter with insulated gate over p-n charge storage region
    • (foreign application priority date July 14, Japan)
    • J. Nishizawa, “Semiconductor photo-electric converter with insulated gate over p-n charge storage region.” U.S. Patent 4 427 990 (foreign application priority date July 14, 1978, Japan).
    • (1978) U.S. Patent 4 427 990
    • Nishizawa, J.1
  • 5
    • 84941460997 scopus 로고
    • Semiconductor image sensors
    • (foreign application priority date Mar. 19, Japan)
    • J. Nishizawa and T. Ohmi, “Semiconductor image sensors,” U.S. Patent 4 377 817 (foreign application priority date Mar. 19, 1979, Japan).
    • (1979) U.S. Patent 4 377 817
    • Nishizawa, J.1    Ohmi, T.2
  • 6
    • 0018738659 scopus 로고
    • Static induction transistor image sensors
    • Dec.
    • J. Nishizawa, T. Tamamushi, and T. Ohmi, “Static induction transistor image sensors,” IEEE Trans. Electron Devices, vol. ED-26, pp. 1970–1977, Dec. 1979.
    • (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 1970-1977
    • Nishizawa, J.1    Tamamushi, T.2    Ohmi, T.3
  • 7
    • 84915397625 scopus 로고
    • SIT image converter
    • J. Nishizawa, Ed. The Netherlands: OHM & North-Holland
    • J. Nishizawa, T. Tamamushi, and S. Suzuki, “SIT image converter,” in JARECT in Semiconductor Technologies, vol. 8, J. Nishizawa, Ed. The Netherlands: OHM & North-Holland, 1983, pp. 219–242.
    • (1983) JARECT in Semiconductor Technologies , vol.8 , pp. 219-242
    • Nishizawa, J.1    Tamamushi, T.2    Suzuki, S.3
  • 8
    • 0016497460 scopus 로고
    • Field-effect transistor versus analog transistor (static induction transistor)
    • Apr.
    • J. Nishizawa, T. Terasaki, and J. Shibata, “Field-effect transistor versus analog transistor (static induction transistor),” IEEE Trans. Electron Devices, vol. ED-22, no. 4, pp. 185–197, Apr. 1975.
    • (1975) IEEE Trans. Electron Devices , vol.ED-22 , Issue.4 , pp. 185-197
    • Nishizawa, J.1    Terasaki, T.2    Shibata, J.3
  • 9
    • 84941448703 scopus 로고
    • Two dimensional solid-state image pick-up device and its signal detecting method
    • filed Nov. 5
    • J. Nishizawa, T. Tamamushi, “Two dimensional solid-state image pick-up device and its signal detecting method.” Japan. Patent Application 58–208116, filed Nov. 5, 1983.
    • (1983) Japan. Patent Application 58–208116
    • Nishizawa, J.1    Tamamushi, T.2
  • 10
    • 84941451859 scopus 로고
    • Two dimensional solid-state image pick-up device
    • filed Mar 21
    • — “Two dimensional solid-state image pick-up device,” Japan. Patent Application 59–56489, filed Mar, 21, 1984.
    • (1984) Japan. Patent Application , pp. 59-56489
    • Nishizawa, J.1    Tamamushi, T.2
  • 12
    • 0005255720 scopus 로고
    • Current amplification in non-homogeneous base structure
    • May
    • — “Current amplification in non-homogeneous base structure,” J. Appl. Phys., vol. 57, pp. 4783–4797, May 1985.
    • (1985) J. Appl. Phys , vol.57 , pp. 4783-4797
    • Nishizawa, J.1    Tamamushi, T.2    Nonaka, K.3
  • 14
    • 0021877974 scopus 로고
    • A very high gain and a wide dynamic range static induction phototransistor
    • Jan.
    • J. Nishizawa, T. Tamamushi, K. Nonaka, and S. Suzuki, “A very high gain and a wide dynamic range static induction phototransistor,” IEEE Electron Device Lett., vol. EDL-6, no. l, pp. 17–19, Jan. 1985.
    • (1985) IEEE Electron Device Lett , vol.EDL-6 , Issue.1 , pp. 17-19
    • Nishizawa, J.1    Tamamushi, T.2    Nonaka, K.3    Suzuki, S.4
  • 15
    • 84941470012 scopus 로고    scopus 로고
    • SIT integrated circuits
    • J. Nishizawa, Ed. Tokyo: Kogyo Chosakai (in Japanese)
    • J. Nishizawa, “SIT integrated circuits,” in Semiconductor Science and Technology, vol. 15, J. Nishizawa, Ed. Tokyo: Kogyo Chosakai, pp. 157–204 (in Japanese).
    • Semiconductor Science and Technology , vol.15 , pp. 157-204
    • Nishizawa, J.1
  • 16
    • 0017923787 scopus 로고
    • A vertical FET with self-aligned ion-implanted source and gate regions
    • Jan.
    • O. Ozawa and H. Iwasaki, “A vertical FET with self-aligned ion-implanted source and gate regions,” IEEE Trans. Electron Devices, vol. ED-25, pp. 56–57. Jan. 1978.
    • (1978) IEEE Trans. Electron Devices , vol.ED-25 , pp. 56-57
    • Ozawa, O.1    Iwasaki, H.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.