A 1/4 Inch Format 250K Pixel Amplified MOS Image Sensor Using CMOS Process

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 1993, Pages 575-578

  Kawashima, H ^a   Andoh, F ^b   Murata, N ^a   Tanaka, K ^b   Yamawaki, M ^a   Taketoshi, K ^b  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

^b NHK SCIENCE AND TECHNICAL RESEARCH LABORATORIES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; DIGITAL CAMERAS; PIXELS; HIGH DEFINITION TELEVISION; IMAGE SENSORS; PHOTODIODES;

% REDUCTIONS; CIRCUIT TECHNIQUES; DESIGN RULES; HIGH SENSITIVITY; HIGH-SPEED OPERATION; LINE-MIXING; M-DESIGN; PIXEL SIZE; STACKINGS; TWO-LINE;

IMAGE SENSORS; MOS DEVICES;

CIRCUIT TECHNIQUE; PIXEL; STACKING PHOTOCONVERSION LAYERS; VERTICAL TWO LINE MIXING;

EID: 0027891944     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (2)

1. Chamberlain.S.G., "Photosensitivity and Scanning of Silicon Image Detector Arrays", IEEE, J.Solid-State Circuits, Vol.SC-4, No 6, p333-342, Dec, 1969
2. F.Andoh, et al., "A 250,000-Pixel Image Sensor with FET Amplification at Each Pixel for High- Speed Television Cameras", ISSCC DIGEST OF TECHNICAL PAPERS, p212-213, Feb., 1990.