Metal Electromigration Damage Healing Under Bidirectional Current Stress

IEEE Electron Device Letters

Volumn 14, Issue 12, 1993, Pages 554-556

  Tao, Jiang ^a   Cheung, Nathan W ^a   Hu, Chenming ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AC MACHINERY; CMOS INTEGRATED CIRCUITS; GATES (TRANSISTOR);

ACCEPTABLE CURRENT DENSITY; BIPOLAR STRESS; CURRENT PULSES; ELECTROMIGRATION LIFETIME; STRESS CYCLE;

ELECTRON EMISSION;

EID: 0027847629     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.260787     Document Type: Article

References (5)

1. Jiang Tao, N. W. Cheung, and C. Hu, “Electromigration characteristics of copper interconnects,” IEEE Electron Device Lett., vol. 14, no. 5, p. 249, 1993.
2. B. K. Liew, N. W. Cheung, and C. Hu, “Projecting interconnect electromigration lifetime for arbitrary current waveforms,” IEEE Trans. Electron Devices, vol. 37, no. 5, pp. 1343–1351, 1990.
3. L. M. Ting, J. S. May, W. R. Hunter, and J. W. McPherson, “AC electromigration characterization and modeling of multilayered interconnects,” in Proc. 31st IEEE International Reliability Physics Symp., 1993, p. 311.
4. K. Hatanaka, T. Noguchi, and K. Maeguchi, “A generalized lifetime model for electromigration under pulsed DC/AC stress conditions,” in Proc. Symp. on VLSI Technology, p. 19, 1990.
5. Jiang Tao, N. W. Cheung, C. Hu, H. K. Kang, and S. S. Wong, “Electromigration performances of electroless plated copper/Pdsilicide metallization,” IEEE Electron Device Lett., vol. 13, No. 8, p. 433, 1992.