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Volumn 34, Issue 3, 1987, Pages 664-672

Thermal Analysis of Electromigration Test Structures

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTIVITY - TESTING; INTEGRATED CIRCUITS, VLSI - TRANSPORT PROPERTIES; METALLIZING - STRESSES;

EID: 0023312194     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22978     Document Type: Article
Times cited : (132)

References (15)
  • 1
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    • Assurance procedures for the control of electromigration
    • J. J. Bart, “Assurance procedures for the control of electromigration,” in Proc. Reliability Phys. Symp., p. 285, 1982.
    • (1982) Proc. Reliability Phys. Symp. , pp. 285
    • Bart, J.J.1
  • 2
    • 0020269975 scopus 로고
    • Basic problems for electromigration in VLSI applications
    • P. S. Ho, “Basic problems for electromigration in VLSI applications,” in Proc. Reliability Phys. Symp., p. 288, 1982.
    • (1982) Proc. Reliability Phys. Symp. , pp. 288
    • Ho, P.S.1
  • 3
    • 0020304389 scopus 로고
    • Electromigration-induced failures in VLSI interconnects
    • P. B. Ghate, “Electromigration-induced failures in VLSI interconnects,” in Proc. Reliability Phys. Symp., p. 292, 1982.
    • (1982) Proc. Reliability Phys. Symp. , pp. 292
    • Ghate, P.B.1
  • 4
    • 0020295977 scopus 로고
    • Current limitations of thin film conductors
    • J. R. Black, “Current limitations of thin film conductors,” in Proc. Reliability Phys. Symp., p. 300, 1982.
    • (1982) Proc. Reliability Phys. Symp. , pp. 300
    • Black, J.R.1
  • 5
    • 84939330342 scopus 로고
    • Technology Associates, Portola Valley, CA, Wafer Reliability Assessment Workshop Final Rep., O. D. Trapp, Ed.
    • P. Merchant, G. Thornberg, K. MacWilliams, and L. Felton, “Electromigration working session report” Technology Associates, Portola Valley, CA, Wafer Reliability Assessment Workshop Final Rep., O. D. Trapp, Ed., p. 213, 1984.
    • (1984) Electromigration working session report , pp. 213
    • Merchant, P.1    Thornberg, G.2    MacWilliams, K.3    Felton, L.4
  • 6
    • 0021430204 scopus 로고
    • Multilevel metallization device structures and process options
    • May
    • S. T. Mastroianni, “Multilevel metallization device structures and process options,” Solid State Technol., vol. 27, p. 155, May 1984.
    • (1984) Solid State Technol. , vol.27 , pp. 155
    • Mastroianni, S.T.1
  • 8
    • 0016949777 scopus 로고
    • Temperature distribution on thin-film metallizations
    • May
    • Y.-S. Chaug and H. L. Huang, “Temperature distribution on thin-film metallizations,” J. Appl. Phys., vol. 47, p. 1775, May 1976.
    • (1976) J. Appl. Phys. , vol.47 , pp. 1775
    • Chaug, Y.-S.1    Huang, H.L.2
  • 9
    • 0002626228 scopus 로고
    • Electromigration in thin films
    • J. M. Poate, K. N. Tu and J. W. Mayer, Eds. New York: Wiley-Interscience
    • F. M. d'Heurle, and P. S. Ho, “Electromigration in thin films,” in Thin Films-Interdiffusion and Reactions, J. M. Poate, K. N. Tu and J. W. Mayer, Eds. New York: Wiley-Interscience, 1978, p. 254.
    • (1978) Thin Films-Interdiffusion and Reactions , pp. 254
    • d'Heurle, F.M.1    Ho, P.S.2
  • 11
    • 0010154361 scopus 로고
    • Thermal conductivity of selected solids
    • Nov. 25
    • R. W. Powell, C. Y. Ho, and P. E. Liley, “Thermal conductivity of selected solids,” NSRDS-NBS 8, Nov. 25, 1966.
    • (1966) NSRDS-NBS 8
    • Powell, R.W.1    Ho, C.Y.2    Liley, P.E.3
  • 12
    • 0016036878 scopus 로고
    • Static temperature distribution in IC chips with isothermal heat sources
    • A. A. Bilotti, “Static temperature distribution in IC chips with isothermal heat sources,” IEEE Trans. Electron Devices, vol. ED-21, p. 217, 1974.
    • (1974) IEEE Trans. Electron Devices , vol.ED-21 , pp. 217
    • Bilotti, A.A.1
  • 13
    • 49949122961 scopus 로고
    • Resistance calculations for thin film patterns
    • P. M. Hall, “Resistance calculations for thin film patterns,” Thin Solid Films, vol. 1, p. 277, 1967-1968.
    • (1967) Thin Solid Films , vol.1 , pp. 277
    • Hall, P.M.1
  • 14
    • 0022246522 scopus 로고
    • Wafer level electromigration tests for production monitoring
    • B. J. Root and T. Turner, “Wafer level electromigration tests for production monitoring,” in Proc. Reliability Phys. Symp., p. 100. 1985.
    • (1985) Proc. Reliability Phys. Symp. , pp. 100
    • Root, B.J.1    Turner, T.2
  • 15
    • 0022223021 scopus 로고
    • Breakdown energy of metal (BEM)- A new technique for monitoring metallization reliability at wafer level
    • C. C. Hong and D. L. Crook, “Breakdown energy of metal (BEM)- A new technique for monitoring metallization reliability at wafer level,” in Proc. Reliability Phys. Symp., p. 108, 1985.
    • (1985) Proc. Reliability Phys. Symp. , pp. 108
    • Hong, C.C.1    Crook, D.L.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.