Electromigration Performance of Electroless Plated Copper/ Pd-Silicide Metallization

IEEE Electron Device Letters

Volumn 13, Issue 8, 1992, Pages 433-435

  Tao, Jiang ^a   Cheung, Nathan W ^a   Hu, Chenming ^a   Kang, H K ^b   Wong, S Simon ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER AND ALLOYS; ELECTROLESS PLATING; SEMICONDUCTOR DEVICES, BIPOLAR;

ELECTROLESS PLATED COPPER; ELECTROMIGRATION; PALLADIUM-SILICIDE METALLIZATION;

SEMICONDUCTOR DEVICE MANUFACTURE;

EID: 0026909543     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.192782     Document Type: Article

References (5)

1. S. P. Murarka, “Overview of copper technology,” in Tungsten and Other Advanced Metals for ULSI Applications in 1990, G. C. Smith and R. Blumenthal Eds. Pittsburgh: MRS, 1990, pp. 179–187.
2. P. L. Pai and C. H. Ting, “Selective electroless copper for VLSI interconnection,” IEEE Electron Device Lett., vol. 10, no. 9, pp. 423–425, 1989.
3. B. K. Liew, N. W. Cheung, and C. Hu, “Projecting interconnect electromigration lifetime for arbitrary current waveforms,” IEEE Trans. Electron Devices, vol. 37, no. 5, pp. 1343–1351, 1990.
4. H.-K. Kang, J. S. H. Cho, I. Asano, and S. S. Wong, “Electromigration of electroless and CVD Cu metallization,” in Proc. 9th Int. VLSI Multilevel Interconnection Conf., 1992, pp. 337–343.
5. J. Tao, K. K. Young, N. W. Cheung, and C. Hu, “Comparison of electromigration reliability of tungsten and aluminum vias under DC and time-varying current stressing,” in Proc. 30th Int. Reliability Phys. Symp., 1992, pp. 338–343.