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Volumn 34, Issue 6, 1987, Pages 1474-1480

Models for total dose degradation of linear integrated circuits

Author keywords

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Indexed keywords


EID: 72349094974     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/TNS.1987.4337502     Document Type: Article
Times cited : (20)

References (15)
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  • 2
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    • A Comparison of Radiation Damage in Linear IC's from Cobalt-60 Gamma Rays and 2.2 MeV Electrons
    • M. K. Gauthier and D. K. Nichols, “A Comparison of Radiation Damage in Linear IC's from Cobalt-60 Gamma Rays and 2.2 MeV Electrons”, IEEE Trans. Nucl. Sci., NS-30, 1492 (1983).
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  • 3
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    • C. T. Sah, “Origin of Interface States and Oxide Charge Generated by Ionizing Radiation”, IEEE Trans. Nucl. Sci., NS-23, 1563 (1976).
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  • 5
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  • 7
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    • The Base Current Recombining at the Oxidized Silicon Surface
    • M. W. Hillen and J. Holsbrink, “The Base Current Recombining at the Oxidized Silicon Surface”, Solid-State Electronics, 26, 453 (1983).
    • (1983) Solid-State Electronics , vol.26 , pp. 453
    • Hillen, M.W.1    Holsbrink, J.2
  • 8
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    • Charge and Interface State Generation in Field Oxides
    • H. E. Boesch, Jr., and T. L. Taylor, “Charge and Interface State Generation in Field Oxides”, IEEE Trans. Nucl. Sci., NS-31, 1273 (1984).
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  • 9
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  • 10
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    • Radiation Design Criteria Handbook
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    • A. G. Stanley, K. E. Martin and S. Douglas, “Radiation Design Criteria Handbook”, NASA Tech. Mem. 33–973, Jet Propulsion Laboratory, Pasadena, CA (1976).
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  • 11
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    • Total Dose Radiation Effects Data for Semiconductor Devices
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  • 15
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.