Soft Errors in VLSI: Present and Future

IEEE Transactions on Components, Hybrids, and Manufacturing Technology

Volumn 2, Issue 4, 1979, Pages 377-387

  May, Timothy C ^a  

^a INTEL CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

VERY LARGE SCALE INTEGRATION;

INTEGRATED CIRCUITS;

EID: 0018700432     PISSN: 01486411     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCHMT.1979.1135487     Document Type: Article

References (18)

1. T. C. May and M. H. Woods, “Alpha-particle-induced soft errors in dynamic memories,” IEEE Trans. Electron Devices, vol. ED-26, Jan. 1979. Published in an earlier version in Proc. 1978 Int. Reliability Physics Symp., Apr. 1978.
2. “Alpha radiation in FET packages,” Technical Session, 1979 Electronic Components Conf. May 14–16, 1979.
3. T. C. May, “Alpha particle measurement techniques,” Workshop, 1979 Microelectronic Measurement Technology Seminar, San Jose, CA, Feb. 6–7, 1979.
4. E. S. Meieran, P. R. Engel, and T. C. May, “Measurement of alpha radioactivity in IC device packages,” Proc. 1979 Int. Reliability Physics Symp., Apr. 1979.
5. J. A. S. Adams and K. A. Richardson, “Thorium, uranium and zirconium concentrations in bauxite,” Economic Geology, vol. 55, pp. 1653–1675, 1960.
6. K. Megumi and T. Mamuro, “Emanation and exhalation of radon and thoron gases from soil particles,” J. Geophysical Res., vol. 79, pp. 3357–3360, 1974.
7. R. W. Keyes, “Physical limits in digital electronics,” Proc. IEEE, vol. 63, May 1975.
8. See, for example, Proc. 1979 Int. Solid State Circuits Conf., Philadelphia, PA, or Proc. 1978 Electron Devices Meeting, Washington, DC.
9. D. S. Yaney, J. T. Nelson, and L. L. Vanskike, “Alpha-particle tracks in silicon and their effect on dynamic MOS RAM reliability,” IEEE Trans. Electron Devices, vol. ED-26, Jan. 1979.
10. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley-Interscience, 1969, pp. 495–501.
11. A. V. S. Satya, V. P. Singh, and D. H. Redfield, “Impact of soft errors on memory system performance,” Proc. 1979 Int. Reliability Physics Symp., Apr. 1979.
12. K. -U. Stein, “Noise-induced error rate as limiting factor for energy per operation in digital IC's,” IEEE J. Solid-State Circuits, vol. SC-12, Oct. 1977.
13. B. Hoenisen and C. A. Mead, “Fundamental limitations in microelectronics—I. MOS technology,” Solid State Electronics, vol. 15, pp. 819–829, 1972.
14. E. U. Condon and H. Odishaw, Handbook of Physics. New York: McGraw-Hill, 1967, part 9, ch. 11.
15. J. C. Pickeland J. T. Blandford, Jr., “Cosmic ray induced errors in MOS memory cells,” IEEE Trans. Nuclear Science, vol. NS-25, Dec. 1978.
16. J. E. Hewitt, C. G. Welles, et al., “Ames collaborative study of cosmic ray neutrons,” NASA Tech. Mem. X-3329, Jan. 1976.
17. C. S. Geunzer, E. A. Wolicki, R. G. Allas, R. B. Theus, and S. E. Gordon, “Single event neutron induced upset in dynamic 16K RAMs,” presented at the 1979 Ann. Conf. on Nuclear and Space Radiation Effects, Santa Cruz, CA, July 17–20, 1979.
18. P. S. Young and K. Fukui, “Predicting light flashes due to α-particle flux on SST planes,” Nature, vol. 241, pp. 112–113.