메뉴 건너뛰기




Volumn 42, Issue 2, 1995, Pages 73-82

Modeling the Heavy Ion Upset Cross Section

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; ENERGY TRANSFER; ESTIMATION; GEOMETRY; INTEGRATION; MATHEMATICAL MODELS; NUMERICAL METHODS; PROBABILITY DENSITY FUNCTION; RANDOM PROCESSES;

EID: 0029293603     PISSN: 00189499     EISSN: 15581578     Source Type: Journal    
DOI: 10.1109/23.372135     Document Type: Article
Times cited : (47)

References (18)
  • 2
    • 0026400769 scopus 로고
    • Determination of SEU parameters of NMOS and CMOS SRAMs
    • Dec.
    • P. J. McNulty, W. J. Beauvais, and D. R. Roth, “Determination of SEU parameters of NMOS and CMOS SRAMs,” IEEE Trans. Nuc. Sci., vol. NS-38, no. 6, pp. 1463–1470, Dec. 1991.
    • (1991) IEEE Trans. Nuc. Sci. , vol.NS-38 , Issue.6 , pp. 1463-1470
    • McNulty, P.J.1    Beauvais, W.J.2    Roth, D.R.3
  • 3
    • 0001671884 scopus 로고
    • Rate predictions for single event effects—A critique
    • Dec.
    • E. L. Petersen, J. C. Pickel, J. H. Adams, Jr., and E. C. Smith, “Rate predictions for single event effects—A critique,” IEEE Trans. Nuc. Sci., vol. NS-39, no. 6, pp. 1577–1599, Dec. 1992.
    • (1992) IEEE Trans. Nuc. Sci. , vol.NS-39 , Issue.6 , pp. 1577-1599
    • Petersen, E.L.1    Pickel, J.C.2    Adams, J.H.3    Smith, E.C.4
  • 4
    • 84937995134 scopus 로고
    • Cosmic ray induced errors in MOS memory cells
    • Apr.
    • J. C. Pickel and J. T. Blandford, Jr., “Cosmic ray induced errors in MOS memory cells,” IEEE Trans. Nuc. Sci., vol. NS-25, no. 2, pp. 1006–1015, Apr. 1980.
    • (1980) IEEE Trans. Nuc. Sci. , vol.NS-25 , Issue.2 , pp. 1006-1015
    • Pickel, J.C.1    Blandford, J.T.2
  • 5
    • 0020948470 scopus 로고
    • Suggested single event upset figure of merit
    • Dec.
    • E. L. Petersen, J. B. Langworthy, and S. E. Diehl-Nagle, “Suggested single event upset figure of merit,” IEEE Trans. Nuc. Sci., vol. NS-30, no. 6, pp. 4533–4539, Dec. 1983.
    • (1983) IEEE Trans. Nuc. Sci. , vol.NS-30 , Issue.6 , pp. 4533-4539
    • Petersen, E.L.1    Langworthy, J.B.2    Diehl-Nagle, S.E.3
  • 6
    • 0027810885 scopus 로고
    • Effects of process parameter distributions and ion strike locations on SEU cross-section data
    • Dec.
    • L. W. Massengill, M. L. Ales, S. E. Kerns, and K. Jones, “Effects of process parameter distributions and ion strike locations on SEU cross-section data,” IEEE Trans. Nuc. Sci., vol. NS-40, no. 6, pp. 1804–1811, Dec. 1993.
    • (1993) IEEE Trans. Nuc. Sci. , vol.NS-40 , Issue.6 , pp. 1804-1811
    • Massengill, L.W.1    Ales, M.L.2    Kerns, S.E.3    Jones, K.4
  • 8
    • 0027853304 scopus 로고
    • The shape of heavy ion upset cross section curves
    • Dec.
    • M. A. Xapsos, T. R. Weatherford, and P. Shapiro, “The shape of heavy ion upset cross section curves,” IEEE Trans. Nuc Sci., vol. NS-40, no. 6, pp. 1812–1819, Dec. 1993.
    • (1993) IEEE Trans. Nuc Sci. , vol.NS-40 , Issue.6 , pp. 1812-1819
    • Xapsos, M.A.1    Weatherford, T.R.2    Shapiro, P.3
  • 10
    • 0024942840 scopus 로고
    • SEU characterization of hardened CMOS SRAMs using statistical analysis of feedback delay in memory cells
    • Dec.
    • R. A. Kohler and R. Koga, “SEU characterization of hardened CMOS SRAMs using statistical analysis of feedback delay in memory cells,” IEEE Trans. Nuc. Sci., vol. NS-36, no. 6, pp. 2318–2323, Dec. 1989.
    • (1989) IEEE Trans. Nuc. Sci. , vol.NS-36 , Issue.6 , pp. 2318-2323
    • Kohler, R.A.1    Koga, R.2
  • 11
    • 0024902710 scopus 로고
    • SEU characterization of a hardened CMOS 64K and 256K SRAM
    • Dec.
    • F. W. Sexton, J. S. Fu, R. A. Kohler, and R. Koga, “SEU characterization of a hardened CMOS 64K and 256K SRAM,” IEEE Trans. Nuc. Sci., vol. NS-36, no. 6, pp. 2311–2317, Dec. 1989.
    • (1989) IEEE Trans. Nuc. Sci. , vol.NS-36 , Issue.6 , pp. 2311-2317
    • Sexton, F.W.1    Fu, J.S.2    Kohler, R.A.3    Koga, R.4
  • 13
    • 0024933371 scopus 로고
    • Variation in SEU sensitivity of dose-imprinted CMOS SRAMS
    • Dec.
    • E. G. Stassinopoulos, G. J. Brucker, O. Van Gunten, and H. S. Kim, “Variation in SEU sensitivity of dose-imprinted CMOS SRAMS,” IEEE Trans. Nuc. Sci., vol. NS-36, no. 6, pp. 2330–2338, Dec. 1989.
    • (1989) IEEE Trans. Nuc. Sci. , vol.NS-36 , Issue.6 , pp. 2330-2338
    • Stassinopoulos, E.G.1    Brucker, G.J.2    Van Gunten, O.3    Kim, H.S.4
  • 15
    • 0023562593 scopus 로고
    • The size effect of ion charge tracks on single event multiple-bit upset
    • Dec.
    • R. G. Martin, N. M. Ghoniem, Y. Song, and J. S. Cable, “The size effect of ion charge tracks on single event multiple-bit upset,” IEEE Trans. Nuc. Sci., vol. NS-34, no. 6, pp. 1305–1309, Dec. 1987.
    • (1987) IEEE Trans. Nuc. Sci. , vol.NS-34 , Issue.6 , pp. 1305-1309
    • Martin, R.G.1    Ghoniem, N.M.2    Song, Y.3    Cable, J.S.4
  • 16
    • 0018547168 scopus 로고
    • Modeling diffusion and collection of charge from ionizing radiation in silicon
    • Nov.
    • S. Kirkpatrick, “Modeling diffusion and collection of charge from ionizing radiation in silicon,” IEEE Trans. Elect Dev., vol. ED-21, no. 11, pp. 1742–1753, Nov. 1979.
    • (1979) IEEE Trans. Elect Dev. , vol.ED-21 , Issue.11 , pp. 1742-1753
    • Kirkpatrick, S.1
  • 17
    • 0027809064 scopus 로고
    • Determination of funnel length from heavy ion cross section versus LET measurements
    • Dec.
    • K. W. Golke, “Determination of funnel length from heavy ion cross section versus LET measurements,” IEEE Trans. Nuc. Sci., vol. NS-40, no. 6, pp. 1910–1917, Dec. 1993.
    • (1993) IEEE Trans. Nuc. Sci. , vol.NS-40 , Issue.6 , pp. 1910-1917
    • Golke, K.W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.