Bias dependence of RF power characteristics of 4H-SiC MESFET's

Proceedings of the IEEE Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

Volumn , Issue , 1995, Pages 40-46

  Moore, K ^a   Weitzel, C ^a   Nordquist, K ^a   Pond III, L ^a   Palmour, J ^a   Allen, S ^a   Carter Jr , C ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER MEASUREMENT; ENERGY GAP; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON CARBIDE;

BIAS DEPENDENCE; DRAIN BIAS; GATE BIAS; POWER ADDED EFFICIENCY; POWER DENSITY;

MESFET DEVICES;

EID: 0029490926     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)