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Journal of Applied Physics

Volumn 53, Issue 3, 1982, Pages 1759-1764

Semiconductors for high-voltage, vertical channel field-effect transistors

(1) Baliga, B J a

a GENERAL ELECTRIC COMPANY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR MATERIALS;

TRANSISTORS, FIELD EFFECT;

EID: 0020098824 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.331646 Document Type: Article

Times cited : (371)

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