Comparison of 6H-SiC, 3C-SiC, and Si for Power Devices

IEEE Transactions on Electron Devices

Volumn 40, Issue 3, 1993, Pages 645-655

  Bhatnagar, Mohit ^a   Baliga, B J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SOLID STATE RECTIFIERS;

POWER MOSFETS; SCHOTTKY RECTIFIERS; SILICON-CARBIDE DEVICES;

MOSFET DEVICES;

EID: 0027558366     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.199372     Document Type: Article

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