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Volumn 22, Issue 4, 1975, Pages 185-197

Field-Effect Transistor Versus Analog Transistor (Static Induction Transistor)

Author keywords

[No Author keywords available]

Indexed keywords

TRANSISTORS, FIELD EFFECT;

EID: 0016497460     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1975.18103     Document Type: Article
Times cited : (373)

References (28)
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  • 6
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  • 8
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    • Space-charge-limited solid-state devices
    • Dec.
    • G. T. Wright, “Space-charge-limited solid-state devices,” Proc. IEEE, vol. 51, p. 1642, Dec. 1963; also J. Brit. Inst. Radio Eng., vol. 20, p. 337, 1960; also Solid-State Electron., vol. 5, p. 117, 1962.
    • (1962) Proc. IEEE , vol.51 , pp. 1642
    • Wright, G.T.1
  • 15
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    • Gridistor-A new field-effect device
    • Dec.
    • S. Teszner and R. Gicquel, “Gridistor-A new field-effect device,” Proc. IEEE, vol. 52, pp. 1502-1513, Dec. 1964.
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  • 16
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    • Modulation of space-charge-limited current flow in insulated-gate field-effect tetrodes
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    • K. Yagi, N. Miyamoto, and J. Nishizawa, Japan. J. Appl. Phys., vol. 9, p. 246, 1970; also J. Nishizawa, T. Terasaki, K. Yagi, and N. Miyamoto, Seoul Int. Conf. Electrical and Electronics Eng., Sept. 1970.
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  • 25
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    • Geurst, J.A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.