Comparison of SiC, GaAs, and Si R F MESFET Power Densities

IEEE Electron Device Letters

Volumn 16, Issue 10, 1995, Pages 451-453

  Weitzel, Charles E ^a  

^a MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CALCULATIONS; CARRIER CONCENTRATION; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ELECTRONS; PERMITTIVITY; PIECEWISE LINEAR TECHNIQUES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

BREAKDOWN VOLTAGE; DRAIN VOLTAGE; PIECEWISE LINEAR MESFET DRAIN CHARACTERISTIC; PLANAR MESFET CROSS SECTION; POWER DENSITY;

MESFET DEVICES;

EID: 0029392984     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.464814     Document Type: Article

References (11)

1. H. Morkoc, S. Strite, G. B. Gao, M. E. Lin, B. Sverdlov, and M. Burns, “Large-bandgap SIC, III-V nitride, and II-VI ZnSe-based semiconductor device technologies,” J. Appl. Phys., vol. 76, no. 3, pp. 1363-1398 Aug. 1994.
2. C. E. Weitzel, J. W. Palmour, C. H. Carter, Jr., and K. Nordquist, “4H-SiC MESFET and 2.8 W/mm power density at 1.8 GHz,” IEEE Electron Device Lett., vol. 15, no. 10, pp. 406–408, Oct. 1994.
3. S. Sriram, R. C. Clarke, A. A. Burk, H. M. Hobgood, P. G. McMullin, P. A. Orphanos, R. R. Siergiej, T. J. Smith, C. D. Brandt, M. C. Driver, and R. H. Hopkins, “RF performance of SiC MESFET's on high resistivity substrates,” IEEE Electron Device Lett., vol. 15, no. 11, pp. 458–459, Nov. 1994.
4. J. R. Waldrop, R. W. Grant, Y. C. Wang, and R. F. Davis, “Metal Schottky barrier contacts on alpha 6H-SiC,” J. Appl. Phys., vol. 72, no. 10, pp. 4757–4760, Nov. 1992.
5. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981.
6. W. J. Schaffer, H. S. Kong, G. H. Negley, and J. W. Palmour, “Hall effect and C-V measurements on epitaxial 6H and 4H SiC,” in Silicon Carbide and Related Materials, M. G. Spenser, R. P. Devaty, J. A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, Eds. Bristol: Inst. Phys. Pub., no. 137, pp. 155–159.
7. P. H. Ladbrooke, MMIC Design: GaAs FET's and HEMT's. Boston, MA: Artech House, 1989.
8. J. W. Palmour, J. A. Edmond, H. S. Kong, and C. H. Carter. Jr., “Vertical power devices in silicon carbide,” in Silicon Carbide and Related Materials, M. G. Spenser, R. P. Devaty, J. A. Edmond, M. Asif Khan, R. Kaplan, and M. Rahman, Eds. Bristol, Inst. Phys. Pub., no. 137, pp. 499–502.
9. M. G. Adlerstein and M. P. Zaitlin, “Cutoff operation of heterojunction bipolar transistors,” Microwave J., Sept. 1991, pp. 114-125.
10. H. M. Macksey, “GaAs Power FET Design”, in GaAs FET Principles and Technology, J. V. Dilorenzo, and D. D. Khandelwal, Eds. Dedham, Mass: Artech House, 1982, pp. 257–275.
11. Wayne Burger, Motorola Semiconductor Product Sector, private communication.