A Simple Edge Termination for Silicon Carbide Devices with Nearly Ideal Breakdown Voltage

IEEE Electron Device Letters

Volumn 15, Issue 10, 1994, Pages 394-395

  Alok, Dev ^a   Baliga, B J ^a   McLarty, P K ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS MATERIALS; ARGON; ELECTRIC BREAKDOWN; ION IMPLANTATION; MONTE CARLO METHODS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; SILICON CARBIDE;

EDGE TERMINATION; NEARLY IDEAL BREAKDOWN VOLTAGE;

SEMICONDUCTOR DEVICES;

EID: 0028531328     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.320979     Document Type: Article

References (7)

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2. R. J. Trew, J.-B. Yan, and P. M. Mock, “The potential of diamond and SiC electronic devices for microwave and millimeter-wave power applications,” in Proc. of the IEEE, 79,pp 598-620, 1991.
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5. M. Bhatnagar, P. K. McLarty, and B. J. Baliga, “Silicon carbide high- voltage (400 V) Schottky barrier diodes,” IEEE Electron Device Lett., vol. 13, pp. 501–503, 1992.
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7. J. A. Edmond, D. C. Waltz, S. Brueckner, J. S. Kong, J. W. Palmour, and C. H. Carter, Jr., “High temperature rectifiers in 6H-silicon carbide,” in Trans. 1st High Temp. Elec. Conf Albuquerque, NM, 1991, p. 207.