Controlling the Characteristics of the MPS Rectifier by Variation of Area of Schottky Region

IEEE Transactions on Electron Devices

Volumn 40, Issue 7, 1993, Pages 1307-1315

  Tu, Shang Hui L ^a   Jayant Baliga, B ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RECTIFIERS; ELECTRIC RESISTANCE; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS; SIMULATION;

FORWARD VOLTAGE DROP; HIGH - RESISTIVITY EPILAYERS; MINORITY CARRIERS; MPS RECTIFIER; SCHOTTKY REGIONS;

SOLID STATE RECTIFIERS;

EID: 0027624891     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.216437     Document Type: Article

References (10)

1. B.J. Baliga, Modern Power Devices. New York: Wiley, 1987.
2. D.A. Grant and J. Gowar, Power MOSFETs, Theory and Applications. New York: Wiley, 1989.
3. S.K. Gandhi, Semiconductor Power Devices. New York: Wiley, 1977.
4. B.J. Baliga and E. Sun, “Comparison of gold, platinum and electron irradiation for lifetime control in power rectifiers,” IEEE Trans. Electron Devices, vol. ED-24, pp. 685–688, 1977.
5. R.J. Graver, Epi and Schottky Diodes in Semiconductor Devices for Power Conditioning. New York: Plenum Press, 1982.
6. B.M. Wilamowski, “Schottky diodes with high breakdown voltage,” Solid State Electron., vol. 26, pp. 491–493, 1983.
7. B.J. Baliga, “The pinch rectifier: A low forward drop, high speed power diode,” IEEE Electron Device Lett., vol. EDL-5, pp. 194–196, 1984.
8. B.J. Baliga, “Analysis of a high voltage merged p-i-n/Schottky (MPS) rectifier,” IEEE Electron Device Lett., vol. EDL-8, pp. 407–409, 1987.
9. B.J. Baliga and H.R. Chang, “The merged P-i-N Schottky (MPS) rectifier: A high voltage, highspeed power diode,” in IEDM Tech. Dig., 1987, pp. 658–661.
10. P.L. Hower and C.E. Weaver, “The SPIN rectifier, a new fast-recovery device,” in PESC ′88 Rec., 1988, pp. 709–717.