High Performance of High-Voltage 4H-SiC Schottky Barrier Diodes

IEEE Electron Device Letters

Volumn 16, Issue 6, 1995, Pages 280-282

  Itoh, Akira ^a   Kimoto, Tsunenobu ^a   Matsunami, Hiroyuki ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BARRIER HEIGHTS; BREAKDOWN VOLTAGE; SCHOTTKY CONTACT METALS;

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; ELECTRIC RESISTANCE; ENERGY GAP; GOLD; NICKEL; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICES; SILICON CARBIDE; TITANIUM;

SCHOTTKY BARRIER DIODES;

EID: 0029327757     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.790735     Document Type: Article

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