High Voltage 4H-SiC Schottky Barrier Diodes

IEEE Electron Device Letters

Volumn 16, Issue 6, 1995, Pages 226-227

  Raghunathan, R ^a   Alok, D ^a   Baliga, B J ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BREAKDOWN VOLTAGE; FORWARD VOLTAGE DROP; SCHOTTKY RECTIFIER; SPECIFIC ON RESISTANCE; TITANIUM SCHOTTKY BARRIER HEIGHT;

CURRENT DENSITY; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRIC RECTIFIERS; ELECTRIC RESISTANCE; NUMERICAL METHODS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DOPING; SILICON CARBIDE; SUBSTRATES; TEMPERATURE; TITANIUM;

SCHOTTKY BARRIER DIODES;

EID: 0029324460     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.790716     Document Type: Article

References (10)

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