RF Performance of SiC MESFET's on High Resistivity Substrates

IEEE Electron Device Letters

Volumn 15, Issue 11, 1994, Pages 458-459

  Sriram, S ^a   Clarke, R C ^a   Burk, A A ^a   Hobgood, H M ^a   McMullin, P G ^a   Orphanos, P A ^a   Siergiej, R R ^a   Smith, T J ^a   Brandt, C D ^a   Driver, M C ^a   Hopkins, R H ^a  

^a Westinghouse Electric   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC CONDUCTIVITY; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SUBSTRATES;

HIGH POWER RADIOFREQUENCY OPERATION; HIGH RESISTIVITY SILICON CARBIDE SUBSTRATES; SUBSTRATE PARASITICS;

MESFET DEVICES;

EID: 0028546045     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.334666     Document Type: Article

References (5)

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2. J. W. Palmour, C. H. Carter, Jr., and C. E. Weitzel, “Silicon carbide microwave FET's,” in Silicon Carbide and Related Materials op. cit., pp. 495–498, 1994.
3. H. M. Hobgood, D. L. Barrett, J. P. McHugh, R. C. Clarke, S. Sriram, A. A. Burk, Jr., J. Greggi, C. D. Brandt, R. H. Hopkins, and W. J. Choyke, “Large diameter 6-H SiC for microwave device applications:’ J. Cryst. Growth, vol. 137, pp. 181–186, 1994.
4. A. A. Burk, Jr., D. L. Barrett, H. M. Hobgood, R. R. Siergiej, T. T. Braggins, R. C. Clarke, G. W. Eldridge, C. D. Brandt, D. J. Larkin, J. A. Powell, and W. J. Choyke, “SiC epitaxial growth on A-axis SiC substrates,” in Silicon Carbide and Related Materials, op cit., pp. 29–32. 1994.
5. D. J. Larkin, P. G. Neudeck, J. A. Powell, and L. G. Matus, “Site-competition epitaxy for controlled doping of CVD silicon carbide,” in Silicon Carbide and Related Materials. op. cit., pp. 51–54, 1994, 1987.