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Volumn 15, Issue 2, 1994, Pages 63-65

Performance Limiting Micropipe Defects in Silicon Carbide Wafers

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; EPITAXIAL GROWTH; PERFORMANCE;

EID: 0028380725     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.285372     Document Type: Article
Times cited : (284)

References (22)
  • 1
    • 0027558366 scopus 로고
    • Comparison of 6H-SiC, 3C-SiC, and Si for power devices
    • M. Bhatnagar and B. J. Baliga
    • “Comparison of 6H-SiC, 3C-SiC, and Si for power devices, ” IEEE Trans. Electron Devices, vol. 40, no. 3, pp. 645–655, March 1993.
    • (1993) IEEE Trans. Electron Devices , vol.40 , Issue.3 , pp. 645-655
    • Bhatnagar, M.1    Baliga, B.J.2
  • 2
    • 0026940017 scopus 로고
    • Silicon-carbide highvoltage (400 V) Schottky barrier diodes
    • M. Bhatnagar, P. K. McLarty, and B. J. Baliga, “Silicon-carbide highvoltage (400 V) Schottky barrier diodes,” IEEE Electron Device Lett., vol. 13, no. 10, pp. 501–503, October 1992.
    • (1992) IEEE Electron Device Lett. , vol.13 , Issue.10 , pp. 501-503
    • Bhatnagar, M.1    McLarty, P.K.2    Baliga, B.J.3
  • 4
    • 85037387616 scopus 로고
    • High temperature rectifiers and MOS devices in 6H-silicon carbide
    • Research Triangle Park, NC, Tech. Rep. ARO 29096.1-EL-S
    • J. W. Palmour, J. A. Edmond, and C. H. Carter Jr., “High temperature rectifiers and MOS devices in 6H-silicon carbide,” U.S. Army Research Office, Research Triangle Park, NC, Tech. Rep. ARO 29096.1-EL-S, August 1992.
    • (1992) U.S. Army Research Office
    • Palmour, J.W.1    Edmond, J.A.2    Carter, C.H.3
  • 7
    • 84936899077 scopus 로고    scopus 로고
    • Moltech Corporation
    • Moltech Corporation, Engineering Building, SUNY, Stony Brook, NY 11794–2280.
    • Engineering, B.1    Stony, B.2
  • 9
    • 0001072754 scopus 로고    scopus 로고
    • Advances in silicon carbide chemical vapor deposition (CVD) for semiconductor device fabrication
    • Albuquerque, NM
    • J. A. Powell, D. J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang, and P. Pirouz, “Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers,” Appl. Phys. Lett., vol. 56, no. 15, pp. 1442–1444, April 1990.
    • (1991) Trans. 1st Int. High Temperature Electron. Conf. , pp. 192-197
    • Powell, J.A.1    Petit, J.B.2    Matus, L.G.3
  • 10
    • 36449005151 scopus 로고
    • High-voltage 6H-SiC p-n junction diodes
    • J. A. Powell, J. B. Petit, and L. G. Matus, “Advances in silicon carbide chemical vapor deposition (CVD) for semiconductor device fabrication,” Trans. 1st Int. High Temperature Electron. Conf., Albuquerque, NM, June 1991, pp. 192–197.
    • (1991) Appl. Phys. Lett. , vol.59 , Issue.14 , pp. 1770-1772
    • Matus, L.G.1    Powell, J.A.2    Salupo, C.S.3
  • 11
    • 36449005151 scopus 로고
    • 1st ed. New York: Wiley
    • L. G. Matus, J. A. Powell, and C. S. Salupo, “High-voltage 6H-SiC p-n junction diodes,” Appl. Phys. Lett., vol. 59, no. 14, pp. 1770–1772, September 1991.
    • (1987) Modern Power Devices
    • Baliga, B.J.1
  • 12
    • 33847510976 scopus 로고
    • Investigation of growth processes of ingots of silicon carbide single crystals, ” J
    • B. J. Baliga, Modern Power Devices, 1st ed. New York: Wiley, 1987.
    • (1978) Cryst. Growth , vol.43 , pp. 209-212
    • Tairov, Y.M.1    Tsvetkov, V.F.2
  • 13
    • 0020112685 scopus 로고
    • Single crystal growth of SiC substrate material for blue light emitting diodes
    • Y. M. Tairov and V. F. Tsvetkov, “Investigation of growth processes of ingots of silicon carbide single crystals,” J. Cryst. Growth, vol. 43, pp. 209–212, February 1978.
    • (1983) IEEE Trans. Electron Devices , vol.30 , Issue.4 , pp. 277-281
    • Ziegler, G.1    Lanig, P.2    Theis, D.3    Weyrich, C.4
  • 14
    • 0020112685 scopus 로고
    • Growth of single crystal boules of n(6H)-SiC
    • Rev. Meeting on the Growth and Characterization of SiC, Raleigh, NC
    • G. Ziegler, P. Lanig, D. Theis, and C. Weyrich, “Single crystal growth of SiC substrate material for blue light emitting diodes,” IEEE Trans. Electron Devices, vol. 30, no. 4, pp. 277–281, April 1983.
    • (1987) presented at the Fourth Nat
    • Carter, C.H.1    Tang, L.2    Davis, R.F.3
  • 16
    • 0026412692 scopus 로고
    • Growth and characterization of 6H-SiC bulk crystals by the sublimation method
    • Amorphous and Crystalline Silicon Carbide IV, C. Y. Yang, M. M. Rahman, and G. L. Harris, Eds. Berlin: Springer-Verlag
    • D. L. Barrett, R. G. Seidensticker, W. Gaida, R. H. Hopkins, and W. J. Choyke, “SiC boule growth by sublimation vapor transport,” J. Cryst. Growth, vol. 109, pp. 17–23, 1991.
    • (1992) Springer Proc. in Physics , vol.71 , pp. 96-100
    • Koga, K.1    Fujikawa, Y.2    Ueda, Y.3    Yamaguchi, T.4
  • 18
    • 0011192515 scopus 로고
    • SiC: problems in crystal growth and polytypic transformation
    • Cleveland, OH
    • P. A. Glasow, “6H-SiC studies and developments at the corporate research laboratory of Siemens AO and the Institute for Applied Physics of the University in Erlangen (FRO),” in Springer Proc. in Physics, vol. 34, Amorphous and Crystalline Silicon Carbide, G. L. Harris and C. Y.-W. Yang, Eds. Berlin: Springer-Verlag, 1989, pp. 13–33.
    • (1993) ” Ph.D. dissertation, Case Western Reserve Univ.
    • Yang, J.-W.1
  • 19
    • 0001093831 scopus 로고
    • Darstellung von einkristallen von silicium carbid und Beherrschung von art und menge der eingebautem verunreingungen
    • J.-W. Yang, “SiC: problems in crystal growth and polytypic transformation,” Ph.D. dissertation, Case Western Reserve Univ., Cleveland, OH, May 1993.
    • (1955) Ber. Deut. Keram. Ges. , vol.32 , pp. 229-236
    • Lely, J.A.1
  • 20
    • 0026158174 scopus 로고
    • Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and betacarbide silicon
    • J. A. Lely, “Darstellung von einkristallen von silicium carbid und Beherrschung von art und menge der eingebautem verunreingungen,” Ber. Deut. Keram. Ges., vol. 32, pp. 229–236, August 1955.
    • (1991) Proc. IEEE , vol.79 , Issue.5 , pp. 677-701
    • Davis, R.F.1    Kelner, G.2    Shur, M.3    Palmour, J.W.4    Edmond, J.A.5
  • 22
    • 0027229714 scopus 로고
    • Characterization of defect structures in SiC single crystals using synchrotron X-ray topography
    • Applicat. of Synchrotron Radiation Techniques to Materials Sci., D. L. Perry, N. D. Shinn, R. L. Stockbauer, K. L. D’Amico, and L. J. Terminello, Eds. Pittsburgh: Materials Research Society
    • J. M. McGarrity, F. B. McLean, W. M. DeLancey, J. Palmour, C. Carter, J. Edmond, and R. E. Oakley, “Silicon carbide JFET radiation response,” IEEE Trans. Nucl. Sci., vol. 39. no. 6, pp. 1974–1981, December 1992.
    • (1993) Materials Res. Soc. Symposia Proc. , vol.307 , pp. 249-254
    • Wang, S.1    Dudley, M.2    Carter, C.3    Asbury, D.4    Fazi, C.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.