-
1
-
-
0027558366
-
Comparison of 6H-SiC, 3C-SiC, and Si for power devices
-
M. Bhatnagar and B. J. Baliga
-
“Comparison of 6H-SiC, 3C-SiC, and Si for power devices, ” IEEE Trans. Electron Devices, vol. 40, no. 3, pp. 645–655, March 1993.
-
(1993)
IEEE Trans. Electron Devices
, vol.40
, Issue.3
, pp. 645-655
-
-
Bhatnagar, M.1
Baliga, B.J.2
-
2
-
-
0026940017
-
Silicon-carbide highvoltage (400 V) Schottky barrier diodes
-
M. Bhatnagar, P. K. McLarty, and B. J. Baliga, “Silicon-carbide highvoltage (400 V) Schottky barrier diodes,” IEEE Electron Device Lett., vol. 13, no. 10, pp. 501–503, October 1992.
-
(1992)
IEEE Electron Device Lett.
, vol.13
, Issue.10
, pp. 501-503
-
-
Bhatnagar, M.1
McLarty, P.K.2
Baliga, B.J.3
-
3
-
-
84936899074
-
Demonstrating the potential of 6H-silicon carbide for power devices
-
Santa Barbara, CA
-
J. W. Palmour, J. A. Edmond, and C. H. Carter Jr., “Demonstrating the potential of 6H-silicon carbide for power devices,” presented at 51st Annual Device Res. Conf., Santa Barbara, CA, June 1993.
-
(1993)
presented at 51st Annual Device Res. Conf.
-
-
Palmour, J.W.1
Edmond, J.A.2
Carter, C.H.3
-
4
-
-
85037387616
-
High temperature rectifiers and MOS devices in 6H-silicon carbide
-
Research Triangle Park, NC, Tech. Rep. ARO 29096.1-EL-S
-
J. W. Palmour, J. A. Edmond, and C. H. Carter Jr., “High temperature rectifiers and MOS devices in 6H-silicon carbide,” U.S. Army Research Office, Research Triangle Park, NC, Tech. Rep. ARO 29096.1-EL-S, August 1992.
-
(1992)
U.S. Army Research Office
-
-
Palmour, J.W.1
Edmond, J.A.2
Carter, C.H.3
-
5
-
-
0003624966
-
High temperature rectifiers in 6H-silicon carbide
-
Albuquerque, NM
-
J. A. Edmond, D. G. Waltz, S. Brueckner, H.-S. Kong, J. W. Palmour, and C. H. Carter Jr., “High temperature rectifiers in 6H-silicon carbide,” in Trans. 1st Int. High Temperature Electron. Conf., Albuquerque, NM, June 1991, pp. 207–212.
-
(1991)
Trans. 1st Int. High Temperature Electron. Conf.
, pp. 207-212
-
-
Edmond, J.A.1
Waltz, D.G.2
Brueckner, S.3
Kong, H.-S.4
Palmour, J.W.5
Carter, C.H.6
-
7
-
-
84936899077
-
-
Moltech Corporation
-
Moltech Corporation, Engineering Building, SUNY, Stony Brook, NY 11794–2280.
-
-
-
Engineering, B.1
Stony, B.2
-
8
-
-
0001072754
-
-
Appl. Phys. Lett
-
vol. 56, no. 15, pp. 1442–1444, April 1990.
-
Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers
-
-
Powell, J. A.1
Larkin, D. J.2
Matus, L. G.3
Choyke, W. J.4
Bradshaw, J. L.5
Henderson, L.6
Yoganathan, M.7
Yang, J.8
Pirouz, P.9
-
9
-
-
0001072754
-
Advances in silicon carbide chemical vapor deposition (CVD) for semiconductor device fabrication
-
Albuquerque, NM
-
J. A. Powell, D. J. Larkin, L. G. Matus, W. J. Choyke, J. L. Bradshaw, L. Henderson, M. Yoganathan, J. Yang, and P. Pirouz, “Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers,” Appl. Phys. Lett., vol. 56, no. 15, pp. 1442–1444, April 1990.
-
(1991)
Trans. 1st Int. High Temperature Electron. Conf.
, pp. 192-197
-
-
Powell, J.A.1
Petit, J.B.2
Matus, L.G.3
-
10
-
-
36449005151
-
High-voltage 6H-SiC p-n junction diodes
-
J. A. Powell, J. B. Petit, and L. G. Matus, “Advances in silicon carbide chemical vapor deposition (CVD) for semiconductor device fabrication,” Trans. 1st Int. High Temperature Electron. Conf., Albuquerque, NM, June 1991, pp. 192–197.
-
(1991)
Appl. Phys. Lett.
, vol.59
, Issue.14
, pp. 1770-1772
-
-
Matus, L.G.1
Powell, J.A.2
Salupo, C.S.3
-
11
-
-
36449005151
-
-
1st ed. New York: Wiley
-
L. G. Matus, J. A. Powell, and C. S. Salupo, “High-voltage 6H-SiC p-n junction diodes,” Appl. Phys. Lett., vol. 59, no. 14, pp. 1770–1772, September 1991.
-
(1987)
Modern Power Devices
-
-
Baliga, B.J.1
-
12
-
-
33847510976
-
Investigation of growth processes of ingots of silicon carbide single crystals, ” J
-
B. J. Baliga, Modern Power Devices, 1st ed. New York: Wiley, 1987.
-
(1978)
Cryst. Growth
, vol.43
, pp. 209-212
-
-
Tairov, Y.M.1
Tsvetkov, V.F.2
-
13
-
-
0020112685
-
Single crystal growth of SiC substrate material for blue light emitting diodes
-
Y. M. Tairov and V. F. Tsvetkov, “Investigation of growth processes of ingots of silicon carbide single crystals,” J. Cryst. Growth, vol. 43, pp. 209–212, February 1978.
-
(1983)
IEEE Trans. Electron Devices
, vol.30
, Issue.4
, pp. 277-281
-
-
Ziegler, G.1
Lanig, P.2
Theis, D.3
Weyrich, C.4
-
14
-
-
0020112685
-
Growth of single crystal boules of n(6H)-SiC
-
Rev. Meeting on the Growth and Characterization of SiC, Raleigh, NC
-
G. Ziegler, P. Lanig, D. Theis, and C. Weyrich, “Single crystal growth of SiC substrate material for blue light emitting diodes,” IEEE Trans. Electron Devices, vol. 30, no. 4, pp. 277–281, April 1983.
-
(1987)
presented at the Fourth Nat
-
-
Carter, C.H.1
Tang, L.2
Davis, R.F.3
-
15
-
-
0026412692
-
SiC boule growth by sublimation vapor transport
-
C. H. Carter Jr., L. Tang, and R. F. Davis, “Growth of single crystal boules of n(6H)-SiC,” presented at the Fourth Nat. Rev. Meeting on the Growth and Characterization of SiC, Raleigh, NC, June 1987.
-
(1991)
J. Cryst. Growth
, vol.109
, pp. 17-23
-
-
Barrett, D.L.1
Seidensticker, R.G.2
Gaida, W.3
Hopkins, R.H.4
Choyke, W.J.5
-
16
-
-
0026412692
-
Growth and characterization of 6H-SiC bulk crystals by the sublimation method
-
Amorphous and Crystalline Silicon Carbide IV, C. Y. Yang, M. M. Rahman, and G. L. Harris, Eds. Berlin: Springer-Verlag
-
D. L. Barrett, R. G. Seidensticker, W. Gaida, R. H. Hopkins, and W. J. Choyke, “SiC boule growth by sublimation vapor transport,” J. Cryst. Growth, vol. 109, pp. 17–23, 1991.
-
(1992)
Springer Proc. in Physics
, vol.71
, pp. 96-100
-
-
Koga, K.1
Fujikawa, Y.2
Ueda, Y.3
Yamaguchi, T.4
-
17
-
-
0344572409
-
6H-SiC studies and developments at the corporate research laboratory of Siemens AO and the Institute for Applied Physics of the University in Erlangen (FRO)
-
K. Koga, Y. Fujikawa, Y. Ueda, and T. Yamaguchi, “Growth and characterization of 6H-SiC bulk crystals by the sublimation method,” in Springer Proc. in Physics, vol. 71, Amorphous and Crystalline Silicon Carbide IV, C. Y. Yang, M. M. Rahman, and G. L. Harris, Eds. Berlin: Springer-Verlag, 1992, pp. 96–100.
-
Springer Proc. in Physics, vol. 34, Amorphous and Crystalline Silicon Carbide, G. L. Harris and C. Y.-W. Yang, Eds. Berlin: Springer-Verlag, 1
, vol.989
, pp. 13-33
-
-
Glasow, P.A.1
-
18
-
-
0011192515
-
SiC: problems in crystal growth and polytypic transformation
-
Cleveland, OH
-
P. A. Glasow, “6H-SiC studies and developments at the corporate research laboratory of Siemens AO and the Institute for Applied Physics of the University in Erlangen (FRO),” in Springer Proc. in Physics, vol. 34, Amorphous and Crystalline Silicon Carbide, G. L. Harris and C. Y.-W. Yang, Eds. Berlin: Springer-Verlag, 1989, pp. 13–33.
-
(1993)
” Ph.D. dissertation, Case Western Reserve Univ.
-
-
Yang, J.-W.1
-
19
-
-
0001093831
-
Darstellung von einkristallen von silicium carbid und Beherrschung von art und menge der eingebautem verunreingungen
-
J.-W. Yang, “SiC: problems in crystal growth and polytypic transformation,” Ph.D. dissertation, Case Western Reserve Univ., Cleveland, OH, May 1993.
-
(1955)
Ber. Deut. Keram. Ges.
, vol.32
, pp. 229-236
-
-
Lely, J.A.1
-
20
-
-
0026158174
-
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and betacarbide silicon
-
J. A. Lely, “Darstellung von einkristallen von silicium carbid und Beherrschung von art und menge der eingebautem verunreingungen,” Ber. Deut. Keram. Ges., vol. 32, pp. 229–236, August 1955.
-
(1991)
Proc. IEEE
, vol.79
, Issue.5
, pp. 677-701
-
-
Davis, R.F.1
Kelner, G.2
Shur, M.3
Palmour, J.W.4
Edmond, J.A.5
-
21
-
-
30344444662
-
Silicon carbide JFET radiation response
-
R. F. Davis, G. Kelner, M. Shur, J. W. Palmour, and J. A. Edmond, “Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide,” Proc. IEEE, vol. 79, no. 5, pp. 677–701, May 1991.
-
(1992)
IEEE Trans. Nucl. Sci.
, vol.39
, Issue.6
, pp. 1974-1981
-
-
McGarrity, J.M.1
McLean, F.B.2
DeLancey, W.M.3
Palmour, J.4
Carter, C.5
Edmond, J.6
Oakley, R.E.7
-
22
-
-
0027229714
-
Characterization of defect structures in SiC single crystals using synchrotron X-ray topography
-
Applicat. of Synchrotron Radiation Techniques to Materials Sci., D. L. Perry, N. D. Shinn, R. L. Stockbauer, K. L. D’Amico, and L. J. Terminello, Eds. Pittsburgh: Materials Research Society
-
J. M. McGarrity, F. B. McLean, W. M. DeLancey, J. Palmour, C. Carter, J. Edmond, and R. E. Oakley, “Silicon carbide JFET radiation response,” IEEE Trans. Nucl. Sci., vol. 39. no. 6, pp. 1974–1981, December 1992.
-
(1993)
Materials Res. Soc. Symposia Proc.
, vol.307
, pp. 249-254
-
-
Wang, S.1
Dudley, M.2
Carter, C.3
Asbury, D.4
Fazi, C.5
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